Space compatibility of emerging, wide-bandgap, ultralow-loss integrated photonics
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arXiv
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| Autori principali: | , , , , , , , , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866929740569378816 |
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| author | Hu, Yue Bai, Xue Shi, Baoqi Sun, Jiahao Ding, Yafei Shang, Zhenyuan Feng, Hanke Zhou, Liping Yang, Bingcheng Kang, Shuting Chen, Yuan Li, Shuyi Long, Jinbao Shen, Chen Bo, Fang ou, Xin Wang, Cheng Liu, Junqiu |
| author_facet | Hu, Yue Bai, Xue Shi, Baoqi Sun, Jiahao Ding, Yafei Shang, Zhenyuan Feng, Hanke Zhou, Liping Yang, Bingcheng Kang, Shuting Chen, Yuan Li, Shuyi Long, Jinbao Shen, Chen Bo, Fang ou, Xin Wang, Cheng Liu, Junqiu |
| contents | Integrated photonics has revolutionized optical communication, sensing, and computation, offering miniaturized and lightweight solutions for spacecraft with limited size and payload. Novel chip-scale instruments based on ultralow-loss integrated photonic platforms, including lasers, frequency combs and atomic traps, have been developed for space applications. Therefore, quantifying the space compatibility of ultralow-loss photonic integrated circuits (PICs), particularly their radiation resistance, is critical. This study experimentally evaluates the radiation resistance of ultralow-loss Si$_3$N$_4$, 4H-SiC, and LiNbO$_3$ PICs under intense $γ$-ray and high-energy proton irradiation. Results show that proton irradiation with $1.1 \times 10^{10}$ $\mathrm{p/cm^2}$ total flux does not significantly increase optical loss or alter the refractive index of these PICs, while $γ$-ray irradiation with 1.2 Mrad accumulated dose only marginally increases their optical loss. These findings provide preliminary evidence of the excellent space compatibility of ultralow-loss Si$_3$N$_4$, 4H-SiC, and LiNbO$_3$ PICs, highlighting their potential for compact and lightweight space systems. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_02567 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Space compatibility of emerging, wide-bandgap, ultralow-loss integrated photonics Hu, Yue Bai, Xue Shi, Baoqi Sun, Jiahao Ding, Yafei Shang, Zhenyuan Feng, Hanke Zhou, Liping Yang, Bingcheng Kang, Shuting Chen, Yuan Li, Shuyi Long, Jinbao Shen, Chen Bo, Fang ou, Xin Wang, Cheng Liu, Junqiu Optics Applied Physics Integrated photonics has revolutionized optical communication, sensing, and computation, offering miniaturized and lightweight solutions for spacecraft with limited size and payload. Novel chip-scale instruments based on ultralow-loss integrated photonic platforms, including lasers, frequency combs and atomic traps, have been developed for space applications. Therefore, quantifying the space compatibility of ultralow-loss photonic integrated circuits (PICs), particularly their radiation resistance, is critical. This study experimentally evaluates the radiation resistance of ultralow-loss Si$_3$N$_4$, 4H-SiC, and LiNbO$_3$ PICs under intense $γ$-ray and high-energy proton irradiation. Results show that proton irradiation with $1.1 \times 10^{10}$ $\mathrm{p/cm^2}$ total flux does not significantly increase optical loss or alter the refractive index of these PICs, while $γ$-ray irradiation with 1.2 Mrad accumulated dose only marginally increases their optical loss. These findings provide preliminary evidence of the excellent space compatibility of ultralow-loss Si$_3$N$_4$, 4H-SiC, and LiNbO$_3$ PICs, highlighting their potential for compact and lightweight space systems. |
| title | Space compatibility of emerging, wide-bandgap, ultralow-loss integrated photonics |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2503.02567 |