Comparative study of divacancies in 3C-, 4H- and 6H-SiC

Fuente: arXiv

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Bibliographic Details
Main Authors:	Shafizade, Danial, Davidsson, Joel, Ohshima, Takeshi, Son, Nguyen Tien, Ivanov, Ivan G.
Format:	Preprint
Published:	2025
Subjects:	Quantum Physics Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2503.02757