Comparative study of divacancies in 3C-, 4H- and 6H-SiC
Fuente:
arXiv
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866916808397684736 |
|---|---|
| author | Shafizade, Danial Davidsson, Joel Ohshima, Takeshi Son, Nguyen Tien Ivanov, Ivan G. |
| author_facet | Shafizade, Danial Davidsson, Joel Ohshima, Takeshi Son, Nguyen Tien Ivanov, Ivan G. |
| contents | The divacancy comprising two neighboring vacant sites in the SiC lattice is a promising defect for applications in quantum technology. So far, most work is concerned with the divacancy in 4H-SiC, whereas the divacancies in 6H- and 3C-SiC have received much less attention. Here, we outline arguments showing that the neutral charge state of the divacancies in the latter two polytypes is intrinsically stable, in contrast to that in 4H-SiC where the photoluminescence quenches in most materials for certain excitation energies (below approximately 1.3 eV). Divacancies in 6H- and 3C-SiC are anticipated to remain stable even with resonant excitation. We provide new ab initio calculation results for the charge transfer levels of divacancies in 6H- and 3C-SiC. Using the temperature dependence of the divacancy emission in 3C-SiC, we estimate the energy position of the (+|0) charge transfer level of the divacancy within the bandgap of this polytype and compare with theoretical results. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_02757 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Comparative study of divacancies in 3C-, 4H- and 6H-SiC Shafizade, Danial Davidsson, Joel Ohshima, Takeshi Son, Nguyen Tien Ivanov, Ivan G. Quantum Physics Materials Science The divacancy comprising two neighboring vacant sites in the SiC lattice is a promising defect for applications in quantum technology. So far, most work is concerned with the divacancy in 4H-SiC, whereas the divacancies in 6H- and 3C-SiC have received much less attention. Here, we outline arguments showing that the neutral charge state of the divacancies in the latter two polytypes is intrinsically stable, in contrast to that in 4H-SiC where the photoluminescence quenches in most materials for certain excitation energies (below approximately 1.3 eV). Divacancies in 6H- and 3C-SiC are anticipated to remain stable even with resonant excitation. We provide new ab initio calculation results for the charge transfer levels of divacancies in 6H- and 3C-SiC. Using the temperature dependence of the divacancy emission in 3C-SiC, we estimate the energy position of the (+|0) charge transfer level of the divacancy within the bandgap of this polytype and compare with theoretical results. |
| title | Comparative study of divacancies in 3C-, 4H- and 6H-SiC |
| topic | Quantum Physics Materials Science |
| url | https://arxiv.org/abs/2503.02757 |