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Comparative study of divacancies in 3C-, 4H- and 6H-SiC

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Shafizade, Danial, Davidsson, Joel, Ohshima, Takeshi, Son, Nguyen Tien, Ivanov, Ivan G.
Format:	Preprint
Publié:	2025
Sujets:	Quantum Physics Materials Science
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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