Gate-tunable band-edge in few-layer MoS$_2$
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866912260525391872 |
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| author | Masseroni, Michele Soltero, Isaac Hugh, James G. Rozhansky, Igor Li, Xue Schmidhuber, Alexander Niese, Markus Taniguchi, Takashi Watanabe, Kenji Fal'ko, Vladimir Ihn, Thomas Ensslin, Klaus |
| author_facet | Masseroni, Michele Soltero, Isaac Hugh, James G. Rozhansky, Igor Li, Xue Schmidhuber, Alexander Niese, Markus Taniguchi, Takashi Watanabe, Kenji Fal'ko, Vladimir Ihn, Thomas Ensslin, Klaus |
| contents | Transition metal dichalcogenides (TMDs) have garnered significant research interest due to the variation in band-edge locations within the hexagonal Brillouin zone between single-layer and bulk configurations. In monolayers, the conduction band minima are centered at the $K$-points, whereas in multilayers, they shift to the $Q$-points, midway between the $Γ$ and $K$ points. In this study, we conduct magnetotransport experiments to measure the occupation in the $Q$ and $K$ valleys in fourlayer molybdenum disulfide (MoS$_2$). We demonstrate electrostatic tunability of the conduction band edge by combining our experimental results with a hybrid $k\cdot p$ tight-binding model that accounts for interlayer screening effects in a self-consistent manner. Furthermore, we extend our model to bilayer and trilayer MoS$_2$, reconciling prior experimental results and quantifying the tunable range of band edges in atomically thin TMDs. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_03371 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Gate-tunable band-edge in few-layer MoS$_2$ Masseroni, Michele Soltero, Isaac Hugh, James G. Rozhansky, Igor Li, Xue Schmidhuber, Alexander Niese, Markus Taniguchi, Takashi Watanabe, Kenji Fal'ko, Vladimir Ihn, Thomas Ensslin, Klaus Mesoscale and Nanoscale Physics Other Condensed Matter Transition metal dichalcogenides (TMDs) have garnered significant research interest due to the variation in band-edge locations within the hexagonal Brillouin zone between single-layer and bulk configurations. In monolayers, the conduction band minima are centered at the $K$-points, whereas in multilayers, they shift to the $Q$-points, midway between the $Γ$ and $K$ points. In this study, we conduct magnetotransport experiments to measure the occupation in the $Q$ and $K$ valleys in fourlayer molybdenum disulfide (MoS$_2$). We demonstrate electrostatic tunability of the conduction band edge by combining our experimental results with a hybrid $k\cdot p$ tight-binding model that accounts for interlayer screening effects in a self-consistent manner. Furthermore, we extend our model to bilayer and trilayer MoS$_2$, reconciling prior experimental results and quantifying the tunable range of band edges in atomically thin TMDs. |
| title | Gate-tunable band-edge in few-layer MoS$_2$ |
| topic | Mesoscale and Nanoscale Physics Other Condensed Matter |
| url | https://arxiv.org/abs/2503.03371 |