Stability, growth, and doping of In$_{2}$(Si, Ge)$_{2}$O$_{7}$ as promising n-type wide-gap semiconductors

Fuente: arXiv

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Bibliographic Details
Main Authors:	Lee, Cheng-Wei, Egbo, Kingsley, Garrity, Emily, Jankousky, Matthew, Garland, Henry, Zakutayev, Andriy, Stevanović, Vladan
Format:	Preprint
Published:	2025
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2503.03619