Copertina

Stability, growth, and doping of In$_{2}$(Si, Ge)$_{2}$O$_{7}$ as promising n-type wide-gap semiconductors

Fuente: arXiv

Salvato in:

Dettagli Bibliografici
Autori principali:	Lee, Cheng-Wei, Egbo, Kingsley, Garrity, Emily, Jankousky, Matthew, Garland, Henry, Zakutayev, Andriy, Stevanović, Vladan
Natura:	Preprint
Pubblicazione:	2025
Soggetti:	Materials Science
Accesso online:	Acceder al recurso
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

Documenti analoghi

Emerging ultra-wide band gap semiconductors for future high-frequency electronics
di: Garrity, Emily M., et al.
Pubblicazione: (2025)

Epitaxial growth and semiconductor properties of NiGa2O4 spinel for Ga2O3/NiO interfaces
di: Egbo, Kingsley, et al.
Pubblicazione: (2025)

NiGa$_{2}$O$_{4}$ interfacial layers in NiO/Ga$_{2}$O$_{3}$ heterojunction diodes at high temperature
di: Egbo, Kingsley, et al.
Pubblicazione: (2024)

Ion exchange synthesizes layered polymorphs of MgZrN$_2$ and MgHfN$_2$, two metastable semiconductors
di: Rom, Christopher L., et al.
Pubblicazione: (2024)

All "roads" lead to rocksalt structure
di: Jankousky, Matthew, et al.
Pubblicazione: (2024)

From Text to Test: AI-Generated Control Software for Materials Science Instruments
di: Fébba, Davi M, et al.
Pubblicazione: (2024)

Rapid screening of molecular beam epitaxy conditions for monoclinic (InxGa1-x)2O3 alloys
di: Schaefer, Stephen, et al.
Pubblicazione: (2024)

Reliable operation of Cr$_2$O$_3$:Mg/ $β$-Ga$_2$O$_3$ p-n heterojunction diodes at 600$^\circ$C
di: Callahan, William A., et al.
Pubblicazione: (2024)

Synthesis pathways to thin films of stable layered nitrides
di: Zakutayev, Andriy, et al.
Pubblicazione: (2024)

A Python code for calculating the mean-value (Baldereschi's) point for any crystal structure
di: Stevanovic, Vladan
Pubblicazione: (2024)

Effective bands and band-like electron transport in amorphous solids
di: Jankousky, Matthew, et al.
Pubblicazione: (2025)

Local distortions as a source of piezoelectric/stiffness decoupling in B-doped AlScN
di: Wolf, Laszlo, et al.
Pubblicazione: (2026)

Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1-x)O2 during suboxide molecular beam epitaxy
di: Chen, Wenshan, et al.
Pubblicazione: (2024)

In-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge
di: Chen, Wenshan, et al.
Pubblicazione: (2023)

Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile suboxide: The examples of Ga and Ge
di: Chen, Wenshan, et al.
Pubblicazione: (2024)

First-principles study of the phase competition, mechanical and piezoelectric properties of pseudo-binary (SiC)(AlN) alloy
di: Wolf, Laszlo, et al.
Pubblicazione: (2025)

Modeling glasses from first-principles using random structure sampling
di: Wolf, Laszlo, et al.
Pubblicazione: (2024)

One-step synthesis of Cu-doped Pb$_{10}$(PO$_{4}$)$_{6}$Cl$_{2}$ apatite: A wide-gap semiconductor
di: Yang, W. Z., et al.
Pubblicazione: (2024)

Autonomous Reliability Qualification of Ga$_2$O$_3$-based Hydrogen and Temperature Sensors via Safe Active Learning
di: Febba, Davi, et al.
Pubblicazione: (2026)

On Hollenbeck-Verbitsky conjecture for $4/3 < p < 2$ and reverse Riesz-type inequalities for $2<p<4$
di: Jaguzović, Vladan
Pubblicazione: (2024)

Impact of the base doping concentration on the transport mechanisms in n-type a-SiGe:H/p-type c-Silicon Heterojunctions
di: P. Rosales-Quintero
Pubblicazione: (2011)

Stability of Wehrl-type Functionals and Concentration Estimates on Bergman Spaces of Log-Subharmonic Functions on the Unit Sphere
di: Jaguzović, Vladan, et al.
Pubblicazione: (2025)

$β$-Ga$_2$O$_3$(001) surface reconstructions from first principles and experiment
di: Lion, Konstantin, et al.
Pubblicazione: (2025)

Quantum confinement in semiconductor random alloys: a case study on Si/SiGe/Si
di: Dick, Daniel, et al.
Pubblicazione: (2026)

Observation of quasi-steady dark excitons and gap phase in a doped semiconductor
di: Mo, Shangkun, et al.
Pubblicazione: (2025)

THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures
di: Stark, David, et al.
Pubblicazione: (2021)

Direct observation of electronic band gap and hot carrier dynamics in GeAs semiconductor
di: Zhang, Zailan, et al.
Pubblicazione: (2024)

Low Leakage Ferroelectric Heteroepitaxial Al$_{0.7}$Sc$_{0.3}$N Films on GaN
di: Yazawa, Keisuke, et al.
Pubblicazione: (2024)

Controlled growth of rare-earth-doped TiO$_{2}$ thin films on III-V semiconductors for hybrid quantum photonic interfaces
di: Hammer, Henry C., et al.
Pubblicazione: (2025)

Current Conduction Mechanisms in n-type a-SiGe:H/p-type c-Si Heterojunctions
di: P. Rosales-Quintero
Pubblicazione: (2008)

Origin of Anomalous Hall effect in Cr-doped RuO$_2$
di: Smolyanyuk, Andriy, et al.
Pubblicazione: (2024)

Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot
di: Fattal, I., et al.
Pubblicazione: (2025)

A Map of the Zintl AM2Pn2 Compounds: Influence of Chemistry on Stability and Electronic Structure
di: Pike, Andrew, et al.
Pubblicazione: (2025)

Electron-phonon interaction and phonons in 2d doped semiconductors
di: Macheda, Francesco, et al.
Pubblicazione: (2022)

Single crystal growth and properties of Au- and Ge-substituted EuPd$_2$Si$_2$
di: Ocker, Michelle, et al.
Pubblicazione: (2026)

Thin-Film Stabilization and Magnetism of η-Carbide Type Iron Nitrides
di: Julien, Baptiste, et al.
Pubblicazione: (2026)

Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga2O3 Layers via Optical Admittance Spectroscopy
di: Payam Rajabi Kalvani, et al.
Pubblicazione: (2025)

Colossal optical anisotropy in wide-bandgap semiconductor CuAlO2
di: Kang, Baekjune, et al.
Pubblicazione: (2024)

DNA signals processing
di: J. Savkovic Stevanovic, et al.
Pubblicazione: (2025)

Some adaptations of gastropods to physical stress on a tropical rocky shore
di: Garrity D. Stephen
Pubblicazione: (1984)