Twisted heterobilayer photonic crystal based on stacking and selective etching of 2D materials

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Hauptverfasser: Wang, Qing, Li, Yuhang, Wang, Shaofeng, Cao, Shuo, Xu, Xiulai, Qian, Chenjiang
Format: Preprint
Veröffentlicht: 2025
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author Wang, Qing
Li, Yuhang
Wang, Shaofeng
Cao, Shuo
Xu, Xiulai
Qian, Chenjiang
author_facet Wang, Qing
Li, Yuhang
Wang, Shaofeng
Cao, Shuo
Xu, Xiulai
Qian, Chenjiang
contents Nanophotonic devices with moiré superlattice is currently attracting broad interest due to the unique periodicity and high efficiency control of photons. Till now, experimental investigations mainly focus on the single layer device, i.e., two or more layers of photonic crystal patterns are merged and etched in a single layer of material. By comparison, twisted photonic crystal with multilayer materials raises challenges in the nanofabrication technology, because the growth of upper layer material usually requires a smooth bottom layer without nanostructures. Hereby, we fabricate twisted heterobilayer photonic crystal in the graphite/Si$_3$N$_4$ heterostructure. We use dry transfer method to stack the graphite on top of bottom Si$_3$N$_4$ with pre-etched photonic crystal patterns. Selective dry etching recipes are used to etch two photonic crystal layers individually, which improves the quality and accuracy in alignment. The cavity photonic mode at the visible wavelength $\sim 700$ nm arsing from the moiré site is clearly observed in experiment. These results reveal the experimental diagram of heterobilayer nanophotonic devices and open the way to design flexibility and control of photons in new degrees of freedom.
format Preprint
id arxiv_https___arxiv_org_abs_2503_04366
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Twisted heterobilayer photonic crystal based on stacking and selective etching of 2D materials
Wang, Qing
Li, Yuhang
Wang, Shaofeng
Cao, Shuo
Xu, Xiulai
Qian, Chenjiang
Optics
Mesoscale and Nanoscale Physics
Nanophotonic devices with moiré superlattice is currently attracting broad interest due to the unique periodicity and high efficiency control of photons. Till now, experimental investigations mainly focus on the single layer device, i.e., two or more layers of photonic crystal patterns are merged and etched in a single layer of material. By comparison, twisted photonic crystal with multilayer materials raises challenges in the nanofabrication technology, because the growth of upper layer material usually requires a smooth bottom layer without nanostructures. Hereby, we fabricate twisted heterobilayer photonic crystal in the graphite/Si$_3$N$_4$ heterostructure. We use dry transfer method to stack the graphite on top of bottom Si$_3$N$_4$ with pre-etched photonic crystal patterns. Selective dry etching recipes are used to etch two photonic crystal layers individually, which improves the quality and accuracy in alignment. The cavity photonic mode at the visible wavelength $\sim 700$ nm arsing from the moiré site is clearly observed in experiment. These results reveal the experimental diagram of heterobilayer nanophotonic devices and open the way to design flexibility and control of photons in new degrees of freedom.
title Twisted heterobilayer photonic crystal based on stacking and selective etching of 2D materials
topic Optics
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2503.04366