Medusa 84 SiH -- A novel high Selectivity Electron Beam Resist for Diamond Quantum Technologies

Fuente: arXiv
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Auteurs principaux: Opaluch, Oliver Roman, Westrich, Sebastian, Oshnik, Nimba, Fuchs, Philipp, Fait, Jan, Wolff, Sandra, Biller, Harry, Sendel, Mandy, Becher, Christoph, Neu, Elke
Format: Preprint
Publié: 2025
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author Opaluch, Oliver Roman
Westrich, Sebastian
Oshnik, Nimba
Fuchs, Philipp
Fait, Jan
Wolff, Sandra
Biller, Harry
Sendel, Mandy
Becher, Christoph
Neu, Elke
author_facet Opaluch, Oliver Roman
Westrich, Sebastian
Oshnik, Nimba
Fuchs, Philipp
Fait, Jan
Wolff, Sandra
Biller, Harry
Sendel, Mandy
Becher, Christoph
Neu, Elke
contents We investigate the novel electron beam resist Medusa 84 SiH by Allresist GmbH (Germany) for nanostructuring of single crystal diamond and its effects on the spin properties of nitrogen vacancy (NV) centers in nanopillars as prototypes for photonic structures. We find contrast curves comparable to those of resists previously used for this task (Hydrogensilsequioxane FOx). We present a minimum selectivity for diamond etching of 6$\pm$1. Using an adhesion-promoting silicon interlayer enables fabrication yields of up to 98\%. We measure $T_2$ times of up to $\sim$25 $μ$s before and after processing, demonstrating that the manufactured structures are usable for diamond-based quantum sensing.
format Preprint
id arxiv_https___arxiv_org_abs_2503_04845
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Medusa 84 SiH -- A novel high Selectivity Electron Beam Resist for Diamond Quantum Technologies
Opaluch, Oliver Roman
Westrich, Sebastian
Oshnik, Nimba
Fuchs, Philipp
Fait, Jan
Wolff, Sandra
Biller, Harry
Sendel, Mandy
Becher, Christoph
Neu, Elke
Instrumentation and Detectors
Mesoscale and Nanoscale Physics
Materials Science
Quantum Physics
We investigate the novel electron beam resist Medusa 84 SiH by Allresist GmbH (Germany) for nanostructuring of single crystal diamond and its effects on the spin properties of nitrogen vacancy (NV) centers in nanopillars as prototypes for photonic structures. We find contrast curves comparable to those of resists previously used for this task (Hydrogensilsequioxane FOx). We present a minimum selectivity for diamond etching of 6$\pm$1. Using an adhesion-promoting silicon interlayer enables fabrication yields of up to 98\%. We measure $T_2$ times of up to $\sim$25 $μ$s before and after processing, demonstrating that the manufactured structures are usable for diamond-based quantum sensing.
title Medusa 84 SiH -- A novel high Selectivity Electron Beam Resist for Diamond Quantum Technologies
topic Instrumentation and Detectors
Mesoscale and Nanoscale Physics
Materials Science
Quantum Physics
url https://arxiv.org/abs/2503.04845