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Bibliographic Details
Main Authors: Pellet-Mary, Clément, Dutta, Debarghya, Tschudin, Märta A., Siegwolf, Patrick, Gross, Boris, Broadway, David A., Cox, Jordan, Schrader, Carolin, Happacher, Jodok, Chica, Daniel G., Dean, Cory R., Roy, Xavier, Maletinsky, Patrick
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2503.04922
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author Pellet-Mary, Clément
Dutta, Debarghya
Tschudin, Märta A.
Siegwolf, Patrick
Gross, Boris
Broadway, David A.
Cox, Jordan
Schrader, Carolin
Happacher, Jodok
Chica, Daniel G.
Dean, Cory R.
Roy, Xavier
Maletinsky, Patrick
author_facet Pellet-Mary, Clément
Dutta, Debarghya
Tschudin, Märta A.
Siegwolf, Patrick
Gross, Boris
Broadway, David A.
Cox, Jordan
Schrader, Carolin
Happacher, Jodok
Chica, Daniel G.
Dean, Cory R.
Roy, Xavier
Maletinsky, Patrick
contents Atomically thin van der Waals (vdW) magnets have emerged as a fascinating platform for the exploration of novel physical phenomena arising from their reduced dimensionality and exceptional material properties. Their single-crystalline nature and ultimate miniaturization position them as leading candidates for next-generation spintronic applications. Antiferromagnetic (AF) vdW magnets are of particular interest, as they combine the advantages of vdW magnets with the functionality of AF spintronics, offering unique opportunities for ultrafast and robust spintronic devices. However, the lack of approaches to locally and deterministically manipulate their order parameter -- the Néel-vector -- remains a key limitation. Here, we introduce a fundamentally new paradigm in nanomagnetism, which we term lateral exchange bias (LEB), to achieve Néel vector control in bilayers of the vdW AF CrSBr. We exploit the single-crystalline registry formed by terraced CrSBr samples, where the bilayer Néel vector is controlled by LEB from neighboring, odd-layered flakes, whose nonzero magnetization we manipulate using magnetic fields. Using this control, we achieve nonvolatile manipulation of magnetic domains and domain walls (DWs) in AF CrSBr bilayers, establishing a powerful toolkit for controlling atomically thin AFs at the nanoscale. Our results challenge conventional views on exchange bias and provide a previously unexplored mechanism for achieving atomic-scale control of AFic order. Our findings pave the way for the development of advanced spintronic architectures and quantum technologies based on vdW magnets.
format Preprint
id arxiv_https___arxiv_org_abs_2503_04922
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Lateral Exchange Bias for Néel-Vector Control in Atomically Thin Antiferromagnets
Pellet-Mary, Clément
Dutta, Debarghya
Tschudin, Märta A.
Siegwolf, Patrick
Gross, Boris
Broadway, David A.
Cox, Jordan
Schrader, Carolin
Happacher, Jodok
Chica, Daniel G.
Dean, Cory R.
Roy, Xavier
Maletinsky, Patrick
Materials Science
Mesoscale and Nanoscale Physics
Atomically thin van der Waals (vdW) magnets have emerged as a fascinating platform for the exploration of novel physical phenomena arising from their reduced dimensionality and exceptional material properties. Their single-crystalline nature and ultimate miniaturization position them as leading candidates for next-generation spintronic applications. Antiferromagnetic (AF) vdW magnets are of particular interest, as they combine the advantages of vdW magnets with the functionality of AF spintronics, offering unique opportunities for ultrafast and robust spintronic devices. However, the lack of approaches to locally and deterministically manipulate their order parameter -- the Néel-vector -- remains a key limitation. Here, we introduce a fundamentally new paradigm in nanomagnetism, which we term lateral exchange bias (LEB), to achieve Néel vector control in bilayers of the vdW AF CrSBr. We exploit the single-crystalline registry formed by terraced CrSBr samples, where the bilayer Néel vector is controlled by LEB from neighboring, odd-layered flakes, whose nonzero magnetization we manipulate using magnetic fields. Using this control, we achieve nonvolatile manipulation of magnetic domains and domain walls (DWs) in AF CrSBr bilayers, establishing a powerful toolkit for controlling atomically thin AFs at the nanoscale. Our results challenge conventional views on exchange bias and provide a previously unexplored mechanism for achieving atomic-scale control of AFic order. Our findings pave the way for the development of advanced spintronic architectures and quantum technologies based on vdW magnets.
title Lateral Exchange Bias for Néel-Vector Control in Atomically Thin Antiferromagnets
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2503.04922