Rutherford Backscattering Spectrometry analysis of the formation of superconducting V$_3$Si thin films
Fuente:
arXiv
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Preprint |
| Veröffentlicht: |
2025
|
| Schlagworte: | |
| Online-Zugang: | |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| _version_ | 1866913727107825664 |
|---|---|
| author | Gessesew, Fshatsion B. Bose, Manjith Ganesan, Kumaravelu Johnson, Brett C. McCallum, Jeffrey C. |
| author_facet | Gessesew, Fshatsion B. Bose, Manjith Ganesan, Kumaravelu Johnson, Brett C. McCallum, Jeffrey C. |
| contents | Vanadium silicide, V$_3$Si, is a promising superconductor for silicon-based superconducting (SC) devices due to its compatibility with silicon substrates and its potential for integration into existing semiconductor technologies. However, to date there have been only a limited number of studies of the formation of SC V$_3$Si thin films and the associated structural and superconducting properties. This work aims to explore the structural characteristics and SC properties of V$_3$Si films, paving the way for the development of functional SC devices for quantum technology applications. We have investigated the formation of V$_3$Si films by directly depositing vanadium (V) onto thermally grown SiO$_2$ on Si, followed by high-vacuum annealing to induce the phase transformation into V$_3$Si. Rutherford Backscattering Spectrometry(RBS) was employed throughout the sample growth process to analyze the material composition as a function of depth using a $^4He^+$ ion beam. Analysis of the RBS data confirmed that the V layer fully reacted with the SiO$_2$ substrate to form V$_3$Si at the interface, in addition to a vanadium oxide (VO$_x$) layer forming atop the V$_3$Si film. The thickness of the V$_3$Si layer ranges from 63 to 130 nm, with annealing temperatures between 750$^\circ$C and 800$^\circ$C. A sharp SC transition was observed at T$_c$ = 13 K in the sample annealed at 750$^\circ$C, with a narrow transition width ($ΔT_c$) of 0.6 K. Initial reactive ion etching (RIE) studies yielded promising results for local removal of the (VO$_x$) to facilitate electrical contact formation to the SC layer. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_05124 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Rutherford Backscattering Spectrometry analysis of the formation of superconducting V$_3$Si thin films Gessesew, Fshatsion B. Bose, Manjith Ganesan, Kumaravelu Johnson, Brett C. McCallum, Jeffrey C. Superconductivity Vanadium silicide, V$_3$Si, is a promising superconductor for silicon-based superconducting (SC) devices due to its compatibility with silicon substrates and its potential for integration into existing semiconductor technologies. However, to date there have been only a limited number of studies of the formation of SC V$_3$Si thin films and the associated structural and superconducting properties. This work aims to explore the structural characteristics and SC properties of V$_3$Si films, paving the way for the development of functional SC devices for quantum technology applications. We have investigated the formation of V$_3$Si films by directly depositing vanadium (V) onto thermally grown SiO$_2$ on Si, followed by high-vacuum annealing to induce the phase transformation into V$_3$Si. Rutherford Backscattering Spectrometry(RBS) was employed throughout the sample growth process to analyze the material composition as a function of depth using a $^4He^+$ ion beam. Analysis of the RBS data confirmed that the V layer fully reacted with the SiO$_2$ substrate to form V$_3$Si at the interface, in addition to a vanadium oxide (VO$_x$) layer forming atop the V$_3$Si film. The thickness of the V$_3$Si layer ranges from 63 to 130 nm, with annealing temperatures between 750$^\circ$C and 800$^\circ$C. A sharp SC transition was observed at T$_c$ = 13 K in the sample annealed at 750$^\circ$C, with a narrow transition width ($ΔT_c$) of 0.6 K. Initial reactive ion etching (RIE) studies yielded promising results for local removal of the (VO$_x$) to facilitate electrical contact formation to the SC layer. |
| title | Rutherford Backscattering Spectrometry analysis of the formation of superconducting V$_3$Si thin films |
| topic | Superconductivity |
| url | https://arxiv.org/abs/2503.05124 |