An alternative application of GaAs-based light-emitting diodes: X-ray detection and imaging
Fuente:
arXiv
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866910862754709504 |
|---|---|
| author | Yu, Quan Wang, Fangbao Yuan, Xin Liu, Ying Gan, Lianghua Xu, Gangyi Shen, Wenzhong Chen, Liang Zhang, Yueheng |
| author_facet | Yu, Quan Wang, Fangbao Yuan, Xin Liu, Ying Gan, Lianghua Xu, Gangyi Shen, Wenzhong Chen, Liang Zhang, Yueheng |
| contents | GaAs-based light-emitting diodes (LEDs) are commonly employed in a variety of applications, including medical imaging, biosensing, optical communications, and night vision. In this paper, we present an alternative application of GaAs-based LED with SI-GaAs substrate for X-ray detection and imaging. The mechanism relies on the semiconductor frequency down-conversion process, where the SI-GaAs substrate acts as a photodetector (PD). Upon X-ray irradiation, the generated photocurrent by the SI-GaAs substrate drives the LED to emit NIR photons which can be detect by a low-cost CCD. We demonstrate direct X-ray detection and present preliminary imaging results, providing another example of the applicability of the PD-LED design for optical frequency conversion. The proposed LED X-ray detector leverages mature materials and fabrication processes. The application of the frequency down-conversion concept makes it possible for pixel-less imaging using a large single imaging unit, eliminating the need for readout circuits. This PD-LED architecture offers an alternative approach to direct X-ray detection and imaging, characterized by higher absorption, improved image resolution, and enhanced material stability. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_05133 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | An alternative application of GaAs-based light-emitting diodes: X-ray detection and imaging Yu, Quan Wang, Fangbao Yuan, Xin Liu, Ying Gan, Lianghua Xu, Gangyi Shen, Wenzhong Chen, Liang Zhang, Yueheng Optics Applied Physics GaAs-based light-emitting diodes (LEDs) are commonly employed in a variety of applications, including medical imaging, biosensing, optical communications, and night vision. In this paper, we present an alternative application of GaAs-based LED with SI-GaAs substrate for X-ray detection and imaging. The mechanism relies on the semiconductor frequency down-conversion process, where the SI-GaAs substrate acts as a photodetector (PD). Upon X-ray irradiation, the generated photocurrent by the SI-GaAs substrate drives the LED to emit NIR photons which can be detect by a low-cost CCD. We demonstrate direct X-ray detection and present preliminary imaging results, providing another example of the applicability of the PD-LED design for optical frequency conversion. The proposed LED X-ray detector leverages mature materials and fabrication processes. The application of the frequency down-conversion concept makes it possible for pixel-less imaging using a large single imaging unit, eliminating the need for readout circuits. This PD-LED architecture offers an alternative approach to direct X-ray detection and imaging, characterized by higher absorption, improved image resolution, and enhanced material stability. |
| title | An alternative application of GaAs-based light-emitting diodes: X-ray detection and imaging |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2503.05133 |