Improper Ferroelectricity at the Monolayer Limit
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arXiv
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2025
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| author | Li, Yilin Evan KP, Harikrishnan Lu, Haidong Steinhardt, Rachel A. Holtz, Megan E. Brützam, Mario Dykes, Matthew M. Arenholz, Elke Hazra, Sankalpa LaVopa, Adriana Huang, Xiaoxi Zhao, Wenwen Behera, Piush Ramesh, Maya Krysko, Evan Gopalan, Venkatraman Ramesh, Ramamoorthy Fennie, Craig J. Cava, Robert J. Guguschev, Christo Gruverman, Alexei Muller, David A. Schlom, Darrell G. |
| author_facet | Li, Yilin Evan KP, Harikrishnan Lu, Haidong Steinhardt, Rachel A. Holtz, Megan E. Brützam, Mario Dykes, Matthew M. Arenholz, Elke Hazra, Sankalpa LaVopa, Adriana Huang, Xiaoxi Zhao, Wenwen Behera, Piush Ramesh, Maya Krysko, Evan Gopalan, Venkatraman Ramesh, Ramamoorthy Fennie, Craig J. Cava, Robert J. Guguschev, Christo Gruverman, Alexei Muller, David A. Schlom, Darrell G. |
| contents | Ultrathin ferroelectric films with out-of-plane polarization and high Curie temperatures are key to miniaturizing electronic devices. Most ferroelectrics employed in devices are proper ferroelectrics, where spontaneous polarization is the primary order parameter. Unfortunately, the Curie temperature of proper ferroelectrics is drastically reduced as the ferroelectric becomes thin; nearly all proper ferroelectrics need to be thicker than several unit cells. The absence of an ultrathin limit has been predicted, but not verified for improper ferroelectrics. These are ferroelectrics where the polarization emerges secondary to the primary order parameter, such as a structural distortion. Here we report improper ferroelectricity with an undiminished Curie temperature in a 0.75-unit-cell-thick hexagonal LuFeO3 (h-LuFeO3) film grown on a SrCo2Ru4O11 bottom electrode with an atomically engineered monolayer bridging layer. Our results demonstrate the absence of a critical thickness for improper ferroelectricity and provide a methodology for creating ultrathin improper ferroelectrics by stabilizing their primary order parameters. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_06214 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Improper Ferroelectricity at the Monolayer Limit Li, Yilin Evan KP, Harikrishnan Lu, Haidong Steinhardt, Rachel A. Holtz, Megan E. Brützam, Mario Dykes, Matthew M. Arenholz, Elke Hazra, Sankalpa LaVopa, Adriana Huang, Xiaoxi Zhao, Wenwen Behera, Piush Ramesh, Maya Krysko, Evan Gopalan, Venkatraman Ramesh, Ramamoorthy Fennie, Craig J. Cava, Robert J. Guguschev, Christo Gruverman, Alexei Muller, David A. Schlom, Darrell G. Materials Science Ultrathin ferroelectric films with out-of-plane polarization and high Curie temperatures are key to miniaturizing electronic devices. Most ferroelectrics employed in devices are proper ferroelectrics, where spontaneous polarization is the primary order parameter. Unfortunately, the Curie temperature of proper ferroelectrics is drastically reduced as the ferroelectric becomes thin; nearly all proper ferroelectrics need to be thicker than several unit cells. The absence of an ultrathin limit has been predicted, but not verified for improper ferroelectrics. These are ferroelectrics where the polarization emerges secondary to the primary order parameter, such as a structural distortion. Here we report improper ferroelectricity with an undiminished Curie temperature in a 0.75-unit-cell-thick hexagonal LuFeO3 (h-LuFeO3) film grown on a SrCo2Ru4O11 bottom electrode with an atomically engineered monolayer bridging layer. Our results demonstrate the absence of a critical thickness for improper ferroelectricity and provide a methodology for creating ultrathin improper ferroelectrics by stabilizing their primary order parameters. |
| title | Improper Ferroelectricity at the Monolayer Limit |
| topic | Materials Science |
| url | https://arxiv.org/abs/2503.06214 |