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A Novel Design for SRAM Bitcell with 3-Complementary-FETs

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Cheng, Xiaoyu, Hu, Yangyang, Miao, Tianci, Liu, Wenbo, Zheng, Qihang, Liu, Yisi, Liang, Jie, Chen, Liang, Guo, Aiying, Yin, Luqiao, Zhang, Jianhua, Ren, Kailin
Formato:	Preprint
Publicado:	2025
Materias:	Applied Physics
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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