Intersubband optical absorption in the GaN/AlN qunatum wire with donor-doping
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866929751821647872 |
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| author | Ortakaya, Sami |
| author_facet | Ortakaya, Sami |
| contents | In this study, we investigate the optical absorption within the conduction-subbands of a cylindrical GaN/AlN quantum wire. We analyze the optical absorption rate and the real part of the dielectric function for both quantum wire (QWR) and quantum dot (QD) structures in the presence of donor-impurity states. The results cover that the density of states associated with free motion in the QWR structure leads to a lower optical absorption compared to the QDs, as evidenced by the optical spectra. This study advances the understanding of GaN/AlN heterostructures by offering a comprehensive analysis of the optical properties of QWRs and QDs, especially under donor-doping situation. As a result, the outcomes provide a clear evidence of the effect of semiconductor nanostructures on the optical properties of optoelectronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_07815 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Intersubband optical absorption in the GaN/AlN qunatum wire with donor-doping Ortakaya, Sami Quantum Physics Mesoscale and Nanoscale Physics Materials Science In this study, we investigate the optical absorption within the conduction-subbands of a cylindrical GaN/AlN quantum wire. We analyze the optical absorption rate and the real part of the dielectric function for both quantum wire (QWR) and quantum dot (QD) structures in the presence of donor-impurity states. The results cover that the density of states associated with free motion in the QWR structure leads to a lower optical absorption compared to the QDs, as evidenced by the optical spectra. This study advances the understanding of GaN/AlN heterostructures by offering a comprehensive analysis of the optical properties of QWRs and QDs, especially under donor-doping situation. As a result, the outcomes provide a clear evidence of the effect of semiconductor nanostructures on the optical properties of optoelectronic devices. |
| title | Intersubband optical absorption in the GaN/AlN qunatum wire with donor-doping |
| topic | Quantum Physics Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2503.07815 |