Gain characterization of LGAD sensors with beta particles and 28-MeV protons

Fuente: arXiv
Saved in:
Bibliographic Details
Main Authors: Farook, Mohamed Hijas Mohamed, Giacomini, Gabriele, DAmen, Gabriele, Pinaroli, Giovanni, Rossi, Enrico, Seidel, Sally, Tricoli, Alessandro
Format: Preprint
Published: 2025
Subjects:
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866908581577621504
author Farook, Mohamed Hijas Mohamed
Giacomini, Gabriele
DAmen, Gabriele
Pinaroli, Giovanni
Rossi, Enrico
Seidel, Sally
Tricoli, Alessandro
author_facet Farook, Mohamed Hijas Mohamed
Giacomini, Gabriele
DAmen, Gabriele
Pinaroli, Giovanni
Rossi, Enrico
Seidel, Sally
Tricoli, Alessandro
contents Low Gain Avalanche Diodes, also known as LGADs, are widely considered for fast-timing applications in high energy physics, nuclear physics, space science, medical imaging, and precision measurements of rare processes. Such devices are silicon-based and feature an intrinsic gain due to a $p{^+}$-doped layer that allows the production of a controlled avalanche of carriers, with multiplication on the order of 10-100. This technology can provide time resolution on the order of 20-30 ps, and variants of this technology can provide precision tracking too. The characterization of LGAD performance has so far primarily been focused on the interaction of minimum ionizing particles for high energy and nuclear physics applications. This article expands the study of LGAD performance to highly-ionizing particles, such as 28-MeV protons, which are relevant for several future scientific applications, e.g. in biology and medical physics, among others. These studies were performed with a beam of 28-MeV protons from a tandem Van de Graaff accelerator at Brookhaven National Laboratory and beta particles from a $^{90}{\rm Sr}$ source; these were used to characterize the response and the gain of an LGAD as a function of bias voltage and collected charge. The experimental results are also compared to TCAD simulations.
format Preprint
id arxiv_https___arxiv_org_abs_2503_07941
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Gain characterization of LGAD sensors with beta particles and 28-MeV protons
Farook, Mohamed Hijas Mohamed
Giacomini, Gabriele
DAmen, Gabriele
Pinaroli, Giovanni
Rossi, Enrico
Seidel, Sally
Tricoli, Alessandro
Instrumentation and Detectors
High Energy Physics - Experiment
Nuclear Experiment
Applied Physics
Low Gain Avalanche Diodes, also known as LGADs, are widely considered for fast-timing applications in high energy physics, nuclear physics, space science, medical imaging, and precision measurements of rare processes. Such devices are silicon-based and feature an intrinsic gain due to a $p{^+}$-doped layer that allows the production of a controlled avalanche of carriers, with multiplication on the order of 10-100. This technology can provide time resolution on the order of 20-30 ps, and variants of this technology can provide precision tracking too. The characterization of LGAD performance has so far primarily been focused on the interaction of minimum ionizing particles for high energy and nuclear physics applications. This article expands the study of LGAD performance to highly-ionizing particles, such as 28-MeV protons, which are relevant for several future scientific applications, e.g. in biology and medical physics, among others. These studies were performed with a beam of 28-MeV protons from a tandem Van de Graaff accelerator at Brookhaven National Laboratory and beta particles from a $^{90}{\rm Sr}$ source; these were used to characterize the response and the gain of an LGAD as a function of bias voltage and collected charge. The experimental results are also compared to TCAD simulations.
title Gain characterization of LGAD sensors with beta particles and 28-MeV protons
topic Instrumentation and Detectors
High Energy Physics - Experiment
Nuclear Experiment
Applied Physics
url https://arxiv.org/abs/2503.07941