Absence of transport altermagnetic spin-splitting effect in RuO2
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arXiv
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| Format: | Preprint |
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2025
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| author | Wang, Yu-Chun Shen, Zhe-Yu Lin, Chia-Hsi Hsu, Wei-Chih Chen, You-Sheng Chin, Yi-Ying Singh, Akhilesh Kr. Lee, Wei-Li Chen, Chien-Te Huang, Ssu-Yen Qu, Danru |
| author_facet | Wang, Yu-Chun Shen, Zhe-Yu Lin, Chia-Hsi Hsu, Wei-Chih Chen, You-Sheng Chin, Yi-Ying Singh, Akhilesh Kr. Lee, Wei-Li Chen, Chien-Te Huang, Ssu-Yen Qu, Danru |
| contents | Altermagnets, which exhibit the advantages of both antiferromagnets and ferromagnets, have attracted significant attention recently. Among them, ruthenium dioxide (RuO2), a prototypical altermagnet candidate, is under intensive debate on its magnetic order and altermagnetic characters. In this work, we provide a comprehensive study of the spin-to-charge conversion in epitaxial RuO2 thin films with various orientations and fabrication methods. By utilizing thermal spin injections from a ferrimagnetic insulator, we unambiguously reveal a negative spin Hall angle for RuO2, which is opposite to all the previous reports using ferromagnetic metals. Most importantly, we observe robust anisotropic spin-to-charge conversion in RuO2, with voltage ratios of 30% for the (100)- and (110)-orientations and 40% for the (101)-orientations. The ratio remains consistent across RuO2 films fabricated by sputtering, pulsed laser deposition, and molecular-beam epitaxy. These results conclusively show a robust and anisotropic spin Hall effect in RuO2 with the absence of altermagnetic spin-splitting contributions. Our study provides crucial insights and advances the understanding of spin-to-charge conversions in emerging materials with low crystal symmetries. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_07985 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Absence of transport altermagnetic spin-splitting effect in RuO2 Wang, Yu-Chun Shen, Zhe-Yu Lin, Chia-Hsi Hsu, Wei-Chih Chen, You-Sheng Chin, Yi-Ying Singh, Akhilesh Kr. Lee, Wei-Li Chen, Chien-Te Huang, Ssu-Yen Qu, Danru Materials Science Altermagnets, which exhibit the advantages of both antiferromagnets and ferromagnets, have attracted significant attention recently. Among them, ruthenium dioxide (RuO2), a prototypical altermagnet candidate, is under intensive debate on its magnetic order and altermagnetic characters. In this work, we provide a comprehensive study of the spin-to-charge conversion in epitaxial RuO2 thin films with various orientations and fabrication methods. By utilizing thermal spin injections from a ferrimagnetic insulator, we unambiguously reveal a negative spin Hall angle for RuO2, which is opposite to all the previous reports using ferromagnetic metals. Most importantly, we observe robust anisotropic spin-to-charge conversion in RuO2, with voltage ratios of 30% for the (100)- and (110)-orientations and 40% for the (101)-orientations. The ratio remains consistent across RuO2 films fabricated by sputtering, pulsed laser deposition, and molecular-beam epitaxy. These results conclusively show a robust and anisotropic spin Hall effect in RuO2 with the absence of altermagnetic spin-splitting contributions. Our study provides crucial insights and advances the understanding of spin-to-charge conversions in emerging materials with low crystal symmetries. |
| title | Absence of transport altermagnetic spin-splitting effect in RuO2 |
| topic | Materials Science |
| url | https://arxiv.org/abs/2503.07985 |