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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2503.08132 |
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| _version_ | 1866913729995603968 |
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| author | Pouranvari, Mohammad |
| author_facet | Pouranvari, Mohammad |
| contents | In this study, we perform a detailed investigation into the interplay between disorder-induced electron localization and long-range hopping amplitudes within the Selective Long-Range Tight-Binding Model (SLRTB). Through numerical simulations, we analyze the electronic properties of the system, with a focus on the participation ratio (PR), entanglement entropy (EE), energy spectrum, and the ratio of level spacings ($r_n$). Our results reveal a marked distinction between negative and positive long-range hopping amplitudes, manifesting in different electronic behaviors and transitions. Notably, we carry out a finite-size scaling analysis, identifying the critical point and exponents that characterize the system's behavior near the transition. The investigation highlights the role of gapless regions in shaping the system's PR, $r_n$, and EE, and the influence of disorder on these properties. The SLRTB model proves to be an effective framework for understanding the effects of disorder and long-range hopping on electron dynamics, offering valuable insights into localization and delocalization phenomena. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_08132 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Probing Electron Localization and Delocalization in the Selective Long-Range Tight-Binding Model Pouranvari, Mohammad Strongly Correlated Electrons In this study, we perform a detailed investigation into the interplay between disorder-induced electron localization and long-range hopping amplitudes within the Selective Long-Range Tight-Binding Model (SLRTB). Through numerical simulations, we analyze the electronic properties of the system, with a focus on the participation ratio (PR), entanglement entropy (EE), energy spectrum, and the ratio of level spacings ($r_n$). Our results reveal a marked distinction between negative and positive long-range hopping amplitudes, manifesting in different electronic behaviors and transitions. Notably, we carry out a finite-size scaling analysis, identifying the critical point and exponents that characterize the system's behavior near the transition. The investigation highlights the role of gapless regions in shaping the system's PR, $r_n$, and EE, and the influence of disorder on these properties. The SLRTB model proves to be an effective framework for understanding the effects of disorder and long-range hopping on electron dynamics, offering valuable insights into localization and delocalization phenomena. |
| title | Probing Electron Localization and Delocalization in the Selective Long-Range Tight-Binding Model |
| topic | Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2503.08132 |