The effect of boron incorporation on leakage and wake-up in ferroelectric Al_{1-x}Sc_xN
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arXiv
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| Auteurs principaux: | , , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866909534312726528 |
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| author | Gremmel, Maike Savant, Chandrashekhar Prakash Bhattacharya, Debaditya Schönweger, Georg Jena, Debdeep Fichtner, Simon |
| author_facet | Gremmel, Maike Savant, Chandrashekhar Prakash Bhattacharya, Debaditya Schönweger, Georg Jena, Debdeep Fichtner, Simon |
| contents | This study explores the influence of boron incorporation on the structural and electrical properties of ferroelectric Aluminum Scandium Nitride (Al_{1-x}Sc_xN ) thin films, focusing on leakage currents, wake-up effects, and imprint behavior. Al_{1-x}Sc_xN films were incorporated with varying boron concentrations and analyzed under different deposition conditions to determine their structural integrity and ferroelectric performance. Key findings include a reduction in leakage currents, non-trivial alterations in bandgap energy as well as an increasing coercive fields with increasing boron content. Films with 6-13 at.% boron exhibited N-polar growth, while those with 16 at.% boron showed mixed polarity after deposition, which affected their ferroelectric response during the initial switching cycles - as did the addition of boron itself compared to pure Al1-xScxN . With increasing boron content, wake-up became gradually more pronounced and was strongest for pure Al_{1-x}B_xN . |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_08399 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | The effect of boron incorporation on leakage and wake-up in ferroelectric Al_{1-x}Sc_xN Gremmel, Maike Savant, Chandrashekhar Prakash Bhattacharya, Debaditya Schönweger, Georg Jena, Debdeep Fichtner, Simon Materials Science This study explores the influence of boron incorporation on the structural and electrical properties of ferroelectric Aluminum Scandium Nitride (Al_{1-x}Sc_xN ) thin films, focusing on leakage currents, wake-up effects, and imprint behavior. Al_{1-x}Sc_xN films were incorporated with varying boron concentrations and analyzed under different deposition conditions to determine their structural integrity and ferroelectric performance. Key findings include a reduction in leakage currents, non-trivial alterations in bandgap energy as well as an increasing coercive fields with increasing boron content. Films with 6-13 at.% boron exhibited N-polar growth, while those with 16 at.% boron showed mixed polarity after deposition, which affected their ferroelectric response during the initial switching cycles - as did the addition of boron itself compared to pure Al1-xScxN . With increasing boron content, wake-up became gradually more pronounced and was strongest for pure Al_{1-x}B_xN . |
| title | The effect of boron incorporation on leakage and wake-up in ferroelectric Al_{1-x}Sc_xN |
| topic | Materials Science |
| url | https://arxiv.org/abs/2503.08399 |