Non-magnetic Fractional Conductance in High Mobility InAs Quantum Point Contacts
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866916649859284992 |
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| author | Rodriguez, I. Villar Gul, Y. Dempsey, C. P. Dong, J. T. Holmes, S. N. Palmstrom, C. J. Pepper, M. |
| author_facet | Rodriguez, I. Villar Gul, Y. Dempsey, C. P. Dong, J. T. Holmes, S. N. Palmstrom, C. J. Pepper, M. |
| contents | In this letter, we report the magneto-electronic properties of high mobility InAs quantum point contacts grown on InP substrates. The 1D conductance reaches a maximum value of 17 plateaus, quantized in units of 2e^2/h, where e is the fundamental unit of charge and h is Planck's constant. The in-plane effective g-factor was estimated to be -10.9 +/- 1.5 for subband N = 1 and -10.8 +/- 1.6 for subband N = 2. Furthermore, a study of the non-magnetic fractional conductance states at 0.2 (e^2/h) and 0.1(e2/h is provided. While their origin remains under discussion, evidence suggests that they arise from strong electron-electron interactions and momentum-conserving backscattering between electrons in two distinct channels within the 1D region. This phenomenon may also be interpreted as an entanglement between the two channel directions facilitated by momentum-conserving backscattering. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_08476 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Non-magnetic Fractional Conductance in High Mobility InAs Quantum Point Contacts Rodriguez, I. Villar Gul, Y. Dempsey, C. P. Dong, J. T. Holmes, S. N. Palmstrom, C. J. Pepper, M. Mesoscale and Nanoscale Physics Quantum Physics In this letter, we report the magneto-electronic properties of high mobility InAs quantum point contacts grown on InP substrates. The 1D conductance reaches a maximum value of 17 plateaus, quantized in units of 2e^2/h, where e is the fundamental unit of charge and h is Planck's constant. The in-plane effective g-factor was estimated to be -10.9 +/- 1.5 for subband N = 1 and -10.8 +/- 1.6 for subband N = 2. Furthermore, a study of the non-magnetic fractional conductance states at 0.2 (e^2/h) and 0.1(e2/h is provided. While their origin remains under discussion, evidence suggests that they arise from strong electron-electron interactions and momentum-conserving backscattering between electrons in two distinct channels within the 1D region. This phenomenon may also be interpreted as an entanglement between the two channel directions facilitated by momentum-conserving backscattering. |
| title | Non-magnetic Fractional Conductance in High Mobility InAs Quantum Point Contacts |
| topic | Mesoscale and Nanoscale Physics Quantum Physics |
| url | https://arxiv.org/abs/2503.08476 |