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| Autores principales: | , |
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| Formato: | Preprint |
| Publicado: |
2025
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| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2503.08810 |
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| _version_ | 1866912270182776832 |
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| author | Abou-Ras, Daniel Maiberg, Matthias |
| author_facet | Abou-Ras, Daniel Maiberg, Matthias |
| contents | The present work revisits the recombination velocities ($s_{\mathrm{GB}}$) of minority-charge carriers determined at grain boundaries in polycrystalline absorber materials for solar cells. The equations describing $s_{\mathrm{GB}}$ as well as the barriers for electrons and holes were derived. It is shown that for given net-doping density and absolute temperature, the experimentally determined recombination velocity of a specific grain boundary depends only on the excess-charge density at this planar defect as well as on the prefactor $s_{\mathrm{GB,0}}$ describing the nonradiative recombination. Value ranges for these two quantities can be determined for any measured $s_{\mathrm{GB}}$ value. When analyzing $s_{\mathrm{GB}}$ datasets acquired on various (Ag,Cu)(In,Ga)Se$_2$ and microcrystalline Si absorbers, it is apparent that both, the excess-charge density and the prefactor $s_{\mathrm{GB,0}}$, remain within about the same orders of magnitude for all grain boundaries analyzed in a specific absorber. The broad range of the recombination velocities over several orders magnitude indicate upward as well as downward band bending, and the band-bending values are on the order of several $\pm$10 meV for all materials analyzed. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_08810 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Recombination velocities at grain boundaries in solar-cell absorbers -- revisited Abou-Ras, Daniel Maiberg, Matthias Materials Science Applied Physics The present work revisits the recombination velocities ($s_{\mathrm{GB}}$) of minority-charge carriers determined at grain boundaries in polycrystalline absorber materials for solar cells. The equations describing $s_{\mathrm{GB}}$ as well as the barriers for electrons and holes were derived. It is shown that for given net-doping density and absolute temperature, the experimentally determined recombination velocity of a specific grain boundary depends only on the excess-charge density at this planar defect as well as on the prefactor $s_{\mathrm{GB,0}}$ describing the nonradiative recombination. Value ranges for these two quantities can be determined for any measured $s_{\mathrm{GB}}$ value. When analyzing $s_{\mathrm{GB}}$ datasets acquired on various (Ag,Cu)(In,Ga)Se$_2$ and microcrystalline Si absorbers, it is apparent that both, the excess-charge density and the prefactor $s_{\mathrm{GB,0}}$, remain within about the same orders of magnitude for all grain boundaries analyzed in a specific absorber. The broad range of the recombination velocities over several orders magnitude indicate upward as well as downward band bending, and the band-bending values are on the order of several $\pm$10 meV for all materials analyzed. |
| title | Recombination velocities at grain boundaries in solar-cell absorbers -- revisited |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2503.08810 |