Ferroelectricity of Wurtzite Al$_{1-x}$Hf$_{x}$N Heterovalent Alloys
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arXiv
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| Autori principali: | , , , , , , , , , , , , , |
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| Natura: | Preprint |
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2025
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| author | Bernstein, Nate S. P. Drury, Daniel Lee, Cheng-Wei Shimada, Tatau Sakai, Yuki Rehm, Oliver Baumgarten, Lutz Müller, Martina Gorai, Prashun Iwazaki, Yoshiki Fox, Glen R. Yazawa, Keisuke Hanrahan, Brendan Brennecka, Geoff L. |
| author_facet | Bernstein, Nate S. P. Drury, Daniel Lee, Cheng-Wei Shimada, Tatau Sakai, Yuki Rehm, Oliver Baumgarten, Lutz Müller, Martina Gorai, Prashun Iwazaki, Yoshiki Fox, Glen R. Yazawa, Keisuke Hanrahan, Brendan Brennecka, Geoff L. |
| contents | Thin films of aluminum hafnium nitride (Al$_{1-x}$Hf$_{x}$N) were synthesized via reactive magnetron sputtering for Hf contents up to $x$ = 0.13. X-ray diffraction showed a single $c$-axis oriented wurtzite phase for all films. Hard X-ray photoelectron spectroscopy demonstrated homogeneous Al:Hf distribution through the thin films and confirmed their insulating character. A collection of complementary tests showed unambiguous polarization inversion, and thus ferroelectricity in multiple samples. Current density vs. electric field hysteresis measurements showed distinct ferroelectric switching current peaks, the piezoelectric coefficient d$_{33,f,meas}$ measured using a double beam laser interferometer (DBLI) showed a reversal in sign with similar magnitude, and anisotropic wet etching confirmed field-induced polarization inversion. This demonstrates the possibility of using tetravalent--and not just trivalent--alloying elements to enable ferroelectricity in AlN-based thin films, highlighting the compositional flexibility of ferroelectricity in wurtzites and greatly expanding the chemistries that can be considered for future devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_08816 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Ferroelectricity of Wurtzite Al$_{1-x}$Hf$_{x}$N Heterovalent Alloys Bernstein, Nate S. P. Drury, Daniel Lee, Cheng-Wei Shimada, Tatau Sakai, Yuki Rehm, Oliver Baumgarten, Lutz Müller, Martina Gorai, Prashun Iwazaki, Yoshiki Fox, Glen R. Yazawa, Keisuke Hanrahan, Brendan Brennecka, Geoff L. Materials Science Applied Physics Thin films of aluminum hafnium nitride (Al$_{1-x}$Hf$_{x}$N) were synthesized via reactive magnetron sputtering for Hf contents up to $x$ = 0.13. X-ray diffraction showed a single $c$-axis oriented wurtzite phase for all films. Hard X-ray photoelectron spectroscopy demonstrated homogeneous Al:Hf distribution through the thin films and confirmed their insulating character. A collection of complementary tests showed unambiguous polarization inversion, and thus ferroelectricity in multiple samples. Current density vs. electric field hysteresis measurements showed distinct ferroelectric switching current peaks, the piezoelectric coefficient d$_{33,f,meas}$ measured using a double beam laser interferometer (DBLI) showed a reversal in sign with similar magnitude, and anisotropic wet etching confirmed field-induced polarization inversion. This demonstrates the possibility of using tetravalent--and not just trivalent--alloying elements to enable ferroelectricity in AlN-based thin films, highlighting the compositional flexibility of ferroelectricity in wurtzites and greatly expanding the chemistries that can be considered for future devices. |
| title | Ferroelectricity of Wurtzite Al$_{1-x}$Hf$_{x}$N Heterovalent Alloys |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2503.08816 |