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| Main Authors: | , , , , |
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| Format: | Preprint |
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2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2503.09126 |
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| _version_ | 1866917953422753792 |
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| author | Cui, Rongjie Zhang, Zelei Wei, Qi Zhang, Yu Ke, Youqi |
| author_facet | Cui, Rongjie Zhang, Zelei Wei, Qi Zhang, Yu Ke, Youqi |
| contents | For the nanoscale structures, disorder scattering plays a vital role in the carriers' transport, including electrons and high-frequency phonons. The capability for effectively treating the disorders, including both diagonal and off-diagonal disorders, is indispensable for quantum transport simulation of realistic device materials. In this work, we report a self-consistent nonequilibrium mean-field quantum transport approach, by combining the auxiliary coherent potential approximation (ACPA) and non-equilibrium Green's function method, for calculating the phonon transport through disordered material structures with the force-constant disorders (including the Anderson-type disorder). The nonequilibrium vertex correction (NVC) is derived in an extended local degree of freedom to account for both the multiple disorder scattering by force-constant disorder and the nonequilibrium quantum statistics. We have tested ACPA-NVC method with the fluctuation-dissipation theorem at the equilibrium and obtained very good agreement with supercell calculations for the phonon transmission. To demonstrate the applicability, we apply ACPA-NVC to calculate the thermal conductance for the disordered Ni/Pt interface, and important effects of force-constant disorder are revealed. ACPA-NVC method provides an effective quantum transport approach for simulating disordered nanoscale devices, and the generalization to simulate disordered nanoelectronic device is straightforward. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_09126 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Nonequilibrium mean-field approach for quantum transport with off-diagonal disorder Cui, Rongjie Zhang, Zelei Wei, Qi Zhang, Yu Ke, Youqi Mesoscale and Nanoscale Physics For the nanoscale structures, disorder scattering plays a vital role in the carriers' transport, including electrons and high-frequency phonons. The capability for effectively treating the disorders, including both diagonal and off-diagonal disorders, is indispensable for quantum transport simulation of realistic device materials. In this work, we report a self-consistent nonequilibrium mean-field quantum transport approach, by combining the auxiliary coherent potential approximation (ACPA) and non-equilibrium Green's function method, for calculating the phonon transport through disordered material structures with the force-constant disorders (including the Anderson-type disorder). The nonequilibrium vertex correction (NVC) is derived in an extended local degree of freedom to account for both the multiple disorder scattering by force-constant disorder and the nonequilibrium quantum statistics. We have tested ACPA-NVC method with the fluctuation-dissipation theorem at the equilibrium and obtained very good agreement with supercell calculations for the phonon transmission. To demonstrate the applicability, we apply ACPA-NVC to calculate the thermal conductance for the disordered Ni/Pt interface, and important effects of force-constant disorder are revealed. ACPA-NVC method provides an effective quantum transport approach for simulating disordered nanoscale devices, and the generalization to simulate disordered nanoelectronic device is straightforward. |
| title | Nonequilibrium mean-field approach for quantum transport with off-diagonal disorder |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2503.09126 |