Moiré-Driven Interfacial Thermal Transport in Twisted Transition Metal Dichalcogenides

Fuente: arXiv
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Auteurs principaux: Jiang, Wenwu, Liang, Ting, Bu, Hekai, Xu, Jianbin, Ouyang, Wengen
Format: Preprint
Publié: 2025
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author Jiang, Wenwu
Liang, Ting
Bu, Hekai
Xu, Jianbin
Ouyang, Wengen
author_facet Jiang, Wenwu
Liang, Ting
Bu, Hekai
Xu, Jianbin
Ouyang, Wengen
contents Cross-plane thermal conductivity in homogeneous transition metal dichalcogenides (TMDs) exhibits a strong dependence on twist angle, originating from atomic reconstruction within moiré superlattices. This reconstruction redistributes interlayer stacking modes, reducing high-efficiency thermal transport regions and softening the transverse acoustic phonon modes as the twist angle increases. We propose a general theoretical expression to capture this behavior, validated against non-equilibrium molecular dynamics simulations across both homo- and heterogeneous twisted TMDs structures, as well as homogeneous twisted graphene and hexagonal boron nitride stacks. Our model demonstrates that the interfacial thermal conductance (ITC) scales with the twist angle ($θ$) as $\ln{\left(\text{ITC}\right)} \propto e^{-\sqrtθ}$. These findings advance the understanding of twist-engineered interfacial thermal transport, offering design principles for optimizing thermal management in devices based on van der Waals layered materials.
format Preprint
id arxiv_https___arxiv_org_abs_2503_09141
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Moiré-Driven Interfacial Thermal Transport in Twisted Transition Metal Dichalcogenides
Jiang, Wenwu
Liang, Ting
Bu, Hekai
Xu, Jianbin
Ouyang, Wengen
Materials Science
Mesoscale and Nanoscale Physics
Cross-plane thermal conductivity in homogeneous transition metal dichalcogenides (TMDs) exhibits a strong dependence on twist angle, originating from atomic reconstruction within moiré superlattices. This reconstruction redistributes interlayer stacking modes, reducing high-efficiency thermal transport regions and softening the transverse acoustic phonon modes as the twist angle increases. We propose a general theoretical expression to capture this behavior, validated against non-equilibrium molecular dynamics simulations across both homo- and heterogeneous twisted TMDs structures, as well as homogeneous twisted graphene and hexagonal boron nitride stacks. Our model demonstrates that the interfacial thermal conductance (ITC) scales with the twist angle ($θ$) as $\ln{\left(\text{ITC}\right)} \propto e^{-\sqrtθ}$. These findings advance the understanding of twist-engineered interfacial thermal transport, offering design principles for optimizing thermal management in devices based on van der Waals layered materials.
title Moiré-Driven Interfacial Thermal Transport in Twisted Transition Metal Dichalcogenides
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2503.09141