Benchmarking low-power flopping-mode spin qubit fidelities in Si/SiGe devices with alloy disorder
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arXiv
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2025
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| author | Young, Steve M. Brickson, Mitchell Petta, Jason R. Jacobson, N. Tobias |
| author_facet | Young, Steve M. Brickson, Mitchell Petta, Jason R. Jacobson, N. Tobias |
| contents | In the "flopping-mode" regime of electron spin resonance, a single electron confined in a double quantum dot is electrically driven in the presence of a magnetic field gradient. The increased dipole moment of the charge in the flopping mode significantly reduces the amount of power required to drive spin rotations. However, the susceptibility of flopping-mode spin qubits to charge noise, and consequently their overall performance, has not been examined in detail. In this work, we simulate single-qubit gate fidelities of electrically driven spin rotations in an ensemble of devices configured to operate in both the single-dot and flopping-mode regimes. Our model accounts for the valley physics of conduction band electrons in silicon and realistic alloy disorder in the SiGe barrier layers, allowing us to investigate device-to-device variability. We include charge and magnetic noise, as well as spin relaxation processes arising from charge noise and electron-phonon coupling. We find that the two operating modes exhibit significantly different susceptibilities to the various noise sources, with valley splitting and spin relaxation times also playing a role in their relative performance. For realistic noise strengths, we find that single-dot gate fidelities are limited by magnetic noise while flopping-mode fidelities are primarily limited by charge noise and spin relaxation. For sufficiently long spin relaxation times, flopping-mode spin operation is feasible with orders-of-magnitude lower drive power and gate fidelities that are on par with conventional single-dot electric dipole spin resonance. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_10578 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Benchmarking low-power flopping-mode spin qubit fidelities in Si/SiGe devices with alloy disorder Young, Steve M. Brickson, Mitchell Petta, Jason R. Jacobson, N. Tobias Mesoscale and Nanoscale Physics Quantum Physics In the "flopping-mode" regime of electron spin resonance, a single electron confined in a double quantum dot is electrically driven in the presence of a magnetic field gradient. The increased dipole moment of the charge in the flopping mode significantly reduces the amount of power required to drive spin rotations. However, the susceptibility of flopping-mode spin qubits to charge noise, and consequently their overall performance, has not been examined in detail. In this work, we simulate single-qubit gate fidelities of electrically driven spin rotations in an ensemble of devices configured to operate in both the single-dot and flopping-mode regimes. Our model accounts for the valley physics of conduction band electrons in silicon and realistic alloy disorder in the SiGe barrier layers, allowing us to investigate device-to-device variability. We include charge and magnetic noise, as well as spin relaxation processes arising from charge noise and electron-phonon coupling. We find that the two operating modes exhibit significantly different susceptibilities to the various noise sources, with valley splitting and spin relaxation times also playing a role in their relative performance. For realistic noise strengths, we find that single-dot gate fidelities are limited by magnetic noise while flopping-mode fidelities are primarily limited by charge noise and spin relaxation. For sufficiently long spin relaxation times, flopping-mode spin operation is feasible with orders-of-magnitude lower drive power and gate fidelities that are on par with conventional single-dot electric dipole spin resonance. |
| title | Benchmarking low-power flopping-mode spin qubit fidelities in Si/SiGe devices with alloy disorder |
| topic | Mesoscale and Nanoscale Physics Quantum Physics |
| url | https://arxiv.org/abs/2503.10578 |