Hole spin splitting in a Ge quantum dot with finite barriers
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arXiv
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| Autores principales: | , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866909807657615360 |
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| author | Wang, Jiawei Hu, Xuedong Fotso, Herbert F |
| author_facet | Wang, Jiawei Hu, Xuedong Fotso, Herbert F |
| contents | We study the low-energy spectrum of a single hole confined in a planar Ge quantum dot (QD) within the effective-mass formalism. The QD is sandwiched between two GeSi barriers of finite potential height grown along the [001] direction. To treat this finite barrier problem, we adopt an independent-band approach in dealing with boundary conditions. The effects of different system parameters are investigated, including the width of the out-of-plane confining well, the size of the dot, and silicon concentration in the confining layers. The more accurate finite-barrier model results in the non-negligible dependence of the anisotropic $g$-factor on the choice of boundary conditions and on the silicon concentration in the barrier. Furthermore, while the ideal model of a planar dot with a square-well heterostructure already has an intrinsic spin-orbit coupling, realistic effects arising from the experimental setup may give rise to additional contributions. We investigate the impact from the top-gate electric field and the residual tensile strain on the qubit states. The results indicate that these effects are important contributions to the total spin-orbit coupling which enables fast electric control. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_11106 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Hole spin splitting in a Ge quantum dot with finite barriers Wang, Jiawei Hu, Xuedong Fotso, Herbert F Mesoscale and Nanoscale Physics Quantum Physics We study the low-energy spectrum of a single hole confined in a planar Ge quantum dot (QD) within the effective-mass formalism. The QD is sandwiched between two GeSi barriers of finite potential height grown along the [001] direction. To treat this finite barrier problem, we adopt an independent-band approach in dealing with boundary conditions. The effects of different system parameters are investigated, including the width of the out-of-plane confining well, the size of the dot, and silicon concentration in the confining layers. The more accurate finite-barrier model results in the non-negligible dependence of the anisotropic $g$-factor on the choice of boundary conditions and on the silicon concentration in the barrier. Furthermore, while the ideal model of a planar dot with a square-well heterostructure already has an intrinsic spin-orbit coupling, realistic effects arising from the experimental setup may give rise to additional contributions. We investigate the impact from the top-gate electric field and the residual tensile strain on the qubit states. The results indicate that these effects are important contributions to the total spin-orbit coupling which enables fast electric control. |
| title | Hole spin splitting in a Ge quantum dot with finite barriers |
| topic | Mesoscale and Nanoscale Physics Quantum Physics |
| url | https://arxiv.org/abs/2503.11106 |