Electrical Spin-Flip Current Switching in Layered Diluted Magnetic Semiconductors for Ultralow-Power Spintronics
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866910875817869312 |
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| author | Nguyen, Lan-Anh T. Baithi, Mallesh Nguyen, Tuan Dung Dhakal, Krishna P. Kim, Jeongyong Kim, Ki Kang Duong, Dinh Loc Kim, Philip Lee, Young Hee |
| author_facet | Nguyen, Lan-Anh T. Baithi, Mallesh Nguyen, Tuan Dung Dhakal, Krishna P. Kim, Jeongyong Kim, Ki Kang Duong, Dinh Loc Kim, Philip Lee, Young Hee |
| contents | Efficient magnetic switching is a cornerstone for advancing spintronics, particularly for energy-efficient data storage and memory devices. Here, we report the electrical switching of spin-flips in V-doped WSe2 multilayers, a van der Waals (vdW)-layered diluted magnetic semiconductor (DMS), demonstrating ultralow-power switching operation at room temperature. Our study reveals unique linear magnetoresistance and parabolic magnetoresistance states, where electrical modulation induces transitions between interlayered ferromagnetic, ferrimagnetic, and antiferromagnetic configurations. We identify an unconventional linear magnetoresistance hysteresis characterized by electrically driven spin flip/flop switching, distinct from conventional random network disorder or linear band-dispersion mechanisms. Applying an electrical voltage across vertical vdW layered V-doped WSe2 multilayers generates the spin currents at room temperature, driving spin-flip transitions from ferromagnetic to antiferromagnetic states due to a strong spin transfer torque effect. Notably, the critical current density reaches an ultralow value of 10-1Acm-2, accompanied by pico-watt power consumption, a record-low spin current density by a six-order-of-magnitude improvement over conventional spintronic devices. These findings establish the V-doped WSe2 multilayer device as a transformative platform for ultralow power spintronics, underscoring the potential of vdW-layered DMS systems for next generation energy-efficient spintronic technologies. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2503_11193 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Electrical Spin-Flip Current Switching in Layered Diluted Magnetic Semiconductors for Ultralow-Power Spintronics Nguyen, Lan-Anh T. Baithi, Mallesh Nguyen, Tuan Dung Dhakal, Krishna P. Kim, Jeongyong Kim, Ki Kang Duong, Dinh Loc Kim, Philip Lee, Young Hee Materials Science Mesoscale and Nanoscale Physics Efficient magnetic switching is a cornerstone for advancing spintronics, particularly for energy-efficient data storage and memory devices. Here, we report the electrical switching of spin-flips in V-doped WSe2 multilayers, a van der Waals (vdW)-layered diluted magnetic semiconductor (DMS), demonstrating ultralow-power switching operation at room temperature. Our study reveals unique linear magnetoresistance and parabolic magnetoresistance states, where electrical modulation induces transitions between interlayered ferromagnetic, ferrimagnetic, and antiferromagnetic configurations. We identify an unconventional linear magnetoresistance hysteresis characterized by electrically driven spin flip/flop switching, distinct from conventional random network disorder or linear band-dispersion mechanisms. Applying an electrical voltage across vertical vdW layered V-doped WSe2 multilayers generates the spin currents at room temperature, driving spin-flip transitions from ferromagnetic to antiferromagnetic states due to a strong spin transfer torque effect. Notably, the critical current density reaches an ultralow value of 10-1Acm-2, accompanied by pico-watt power consumption, a record-low spin current density by a six-order-of-magnitude improvement over conventional spintronic devices. These findings establish the V-doped WSe2 multilayer device as a transformative platform for ultralow power spintronics, underscoring the potential of vdW-layered DMS systems for next generation energy-efficient spintronic technologies. |
| title | Electrical Spin-Flip Current Switching in Layered Diluted Magnetic Semiconductors for Ultralow-Power Spintronics |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2503.11193 |