Enhanced LPDDR4X PHY in 12 nm FinFET

Fuente: arXiv
Saved in:
Bibliographic Details
Main Authors: Feldmann, Johannes, Lappas, Jan, Esmaeilpour, Mohammadreza, Abdo, Hussien, Weis, Christian, Wehn, Norbert
Format: Preprint
Published: 2025
Subjects:
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866913737711026176
author Feldmann, Johannes
Lappas, Jan
Esmaeilpour, Mohammadreza
Abdo, Hussien
Weis, Christian
Wehn, Norbert
author_facet Feldmann, Johannes
Lappas, Jan
Esmaeilpour, Mohammadreza
Abdo, Hussien
Weis, Christian
Wehn, Norbert
contents The demand for memory technologies with high bandwidth, low power consumption, and enhanced reliability has led to the emergence of LPDDR4X DRAM memory. However, power efficiency and reliability depend not only on the memory device but also on its interfacing. To enable advanced monitoring of LPDDR4X DRAM devices and interface tuning, we propose a LPDDR4X PHY implemented in 12 nm FinFET technology. A RISC-V subsystem offers software-controlled DRAM interface access as well as external interfaces to connect additional sensors for monitoring temperature and current consumption of LPDDR4X DRAM devices.
format Preprint
id arxiv_https___arxiv_org_abs_2503_11654
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Enhanced LPDDR4X PHY in 12 nm FinFET
Feldmann, Johannes
Lappas, Jan
Esmaeilpour, Mohammadreza
Abdo, Hussien
Weis, Christian
Wehn, Norbert
Hardware Architecture
The demand for memory technologies with high bandwidth, low power consumption, and enhanced reliability has led to the emergence of LPDDR4X DRAM memory. However, power efficiency and reliability depend not only on the memory device but also on its interfacing. To enable advanced monitoring of LPDDR4X DRAM devices and interface tuning, we propose a LPDDR4X PHY implemented in 12 nm FinFET technology. A RISC-V subsystem offers software-controlled DRAM interface access as well as external interfaces to connect additional sensors for monitoring temperature and current consumption of LPDDR4X DRAM devices.
title Enhanced LPDDR4X PHY in 12 nm FinFET
topic Hardware Architecture
url https://arxiv.org/abs/2503.11654