Evolution of surface morphology from Stranski Krastanov growth mode to step flow growth mode in InSbBi thin films
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arXiv
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| Format: | Preprint |
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2025
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| author | Edirisinghe, Chandima Kasun Wijesinghe, Anuradha Rathore, Anjali Adhikari, Pradip Rouleau, Christopher Lee, Joon Sue |
| author_facet | Edirisinghe, Chandima Kasun Wijesinghe, Anuradha Rathore, Anjali Adhikari, Pradip Rouleau, Christopher Lee, Joon Sue |
| contents | The incorporation of dilute concentrations of bismuth (Bi) into traditional III V alloys leads to significant reduction in bandgap energy, making InSbBi is a promising candidate for long wavelength infrared photodetection sensors due to its small bandgap (<0.17 eV). Furthermore, InSbBi could serve as a valuable platform for spin dynamics and quantum phenomena due to its strong spin-orbit coupling. Despite its potential, the material quality of InSbBi alloys lags behind that of conventional III V semiconductors, primarily due to the substantial challenges associated with incorporating Bi into InSb and producing high-quality InSbBi with varying Bi compositions. In this study, we address these issues by developing a method for growing smooth InSbBi thin films with tunable Bi incorporation up to 1.81% by the dynamic adjustment of Sb flux and careful control of the interplay between growth temperature and Bi flux using molecular beam epitaxy. This work paves the path for high-quality InSbBi thin films for applications in photodetection, spintronics, and quantum technology. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_11831 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Evolution of surface morphology from Stranski Krastanov growth mode to step flow growth mode in InSbBi thin films Edirisinghe, Chandima Kasun Wijesinghe, Anuradha Rathore, Anjali Adhikari, Pradip Rouleau, Christopher Lee, Joon Sue Materials Science The incorporation of dilute concentrations of bismuth (Bi) into traditional III V alloys leads to significant reduction in bandgap energy, making InSbBi is a promising candidate for long wavelength infrared photodetection sensors due to its small bandgap (<0.17 eV). Furthermore, InSbBi could serve as a valuable platform for spin dynamics and quantum phenomena due to its strong spin-orbit coupling. Despite its potential, the material quality of InSbBi alloys lags behind that of conventional III V semiconductors, primarily due to the substantial challenges associated with incorporating Bi into InSb and producing high-quality InSbBi with varying Bi compositions. In this study, we address these issues by developing a method for growing smooth InSbBi thin films with tunable Bi incorporation up to 1.81% by the dynamic adjustment of Sb flux and careful control of the interplay between growth temperature and Bi flux using molecular beam epitaxy. This work paves the path for high-quality InSbBi thin films for applications in photodetection, spintronics, and quantum technology. |
| title | Evolution of surface morphology from Stranski Krastanov growth mode to step flow growth mode in InSbBi thin films |
| topic | Materials Science |
| url | https://arxiv.org/abs/2503.11831 |