Oxygen vacancy engineering in pulsed laser deposited BaSnO$_3$ thin films on SrTiO$_3$
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| Format: | Preprint |
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2025
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| _version_ | 1866912276790902784 |
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| author | Acevedo, Wilson Román Aguirre, Myriam H. Noheda, Beatriz Rubi, Diego |
| author_facet | Acevedo, Wilson Román Aguirre, Myriam H. Noheda, Beatriz Rubi, Diego |
| contents | We demonstrate the tunability of oxygen content in pulsed laser deposition (PLD)-grown barium stannate (BaSn$O_3$, BSO) thin films by precisely controlling the background oxygen pressure over a broad range from 0.0004 mbar to 0.13 mbar. The introduction of oxygen vacancies significantly alters the structural properties of BSO films, inducing a monotonic expansion of the out-of-plane lattice parameter and cell volume as the vacancy concentration increases. The progressive formation of oxygen vacancies was spectroscopically tracked using X-ray photoelectron spectroscopy (XPS), providing direct insight into the vacancy evolution. Furthermore, we show that the oxygen stoichiometry in BSO plays a critical role in modulating the sheet resistance of BSO/LaScO$_3$ heterostructures, enabling interface metallic electron conduction. This oxygen content control offers a robust strategy to tailor the electronic properties at the interface, highlighting its potential for oxide electronics and functional interface engineering. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2503_11957 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Oxygen vacancy engineering in pulsed laser deposited BaSnO$_3$ thin films on SrTiO$_3$ Acevedo, Wilson Román Aguirre, Myriam H. Noheda, Beatriz Rubi, Diego Materials Science We demonstrate the tunability of oxygen content in pulsed laser deposition (PLD)-grown barium stannate (BaSn$O_3$, BSO) thin films by precisely controlling the background oxygen pressure over a broad range from 0.0004 mbar to 0.13 mbar. The introduction of oxygen vacancies significantly alters the structural properties of BSO films, inducing a monotonic expansion of the out-of-plane lattice parameter and cell volume as the vacancy concentration increases. The progressive formation of oxygen vacancies was spectroscopically tracked using X-ray photoelectron spectroscopy (XPS), providing direct insight into the vacancy evolution. Furthermore, we show that the oxygen stoichiometry in BSO plays a critical role in modulating the sheet resistance of BSO/LaScO$_3$ heterostructures, enabling interface metallic electron conduction. This oxygen content control offers a robust strategy to tailor the electronic properties at the interface, highlighting its potential for oxide electronics and functional interface engineering. |
| title | Oxygen vacancy engineering in pulsed laser deposited BaSnO$_3$ thin films on SrTiO$_3$ |
| topic | Materials Science |
| url | https://arxiv.org/abs/2503.11957 |