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| Main Authors: | , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2503.12196 |
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| _version_ | 1866911485149577216 |
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| author | Lü, Sibin Hu, Jun |
| author_facet | Lü, Sibin Hu, Jun |
| contents | The exploration of topological phases remains a cutting-edge research frontier, driven by their promising potential for next-generation electronic and quantum technologies. In this work, we employ first-principles calculations and tight-binding modeling to systematically investigate the topological properties of freestanding two-dimensional (2D) honeycomb Bi, HgTe, and Al2O3(0001)-supported HgTe. Remarkably, all three systems exhibit coexistence of first-order and higher-order topological insulator states, manifested by gapless edge states in one-dimensional (1D) nanoribbons and symmetry-related corner states in zero-dimensional (0D) nanoflakes. Furthermore, fractional electron charges may accumulate at the corners of armchair-edged nanoflakes. Among these materials, HgTe/Al2O3(0001) is particularly promising due to its experimentally feasible atomic configuration and low-energy corner states. Our findings highlight the importance of exploring higher-order topological phases in Z_2 quantum spin Hall insulators and pave the way for new possibilities in device applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_12196 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Intrinsic higher-order topological states in 2D honeycomb Z_2 quantum spin Hall insulators Lü, Sibin Hu, Jun Materials Science The exploration of topological phases remains a cutting-edge research frontier, driven by their promising potential for next-generation electronic and quantum technologies. In this work, we employ first-principles calculations and tight-binding modeling to systematically investigate the topological properties of freestanding two-dimensional (2D) honeycomb Bi, HgTe, and Al2O3(0001)-supported HgTe. Remarkably, all three systems exhibit coexistence of first-order and higher-order topological insulator states, manifested by gapless edge states in one-dimensional (1D) nanoribbons and symmetry-related corner states in zero-dimensional (0D) nanoflakes. Furthermore, fractional electron charges may accumulate at the corners of armchair-edged nanoflakes. Among these materials, HgTe/Al2O3(0001) is particularly promising due to its experimentally feasible atomic configuration and low-energy corner states. Our findings highlight the importance of exploring higher-order topological phases in Z_2 quantum spin Hall insulators and pave the way for new possibilities in device applications. |
| title | Intrinsic higher-order topological states in 2D honeycomb Z_2 quantum spin Hall insulators |
| topic | Materials Science |
| url | https://arxiv.org/abs/2503.12196 |