Strongly anharmonic flux-tunable transmon based on InAs-Al 2D heterostructure

Fuente: arXiv
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Main Authors: Liu, Shukai, Bordoloi, Arunav, Issokson, Jacob, Levy, Ido, Vavilov, Maxim G., Shabani, Javad, Manucharyan, Vladimir E.
Format: Preprint
Published: 2025
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author Liu, Shukai
Bordoloi, Arunav
Issokson, Jacob
Levy, Ido
Vavilov, Maxim G.
Shabani, Javad
Manucharyan, Vladimir E.
author_facet Liu, Shukai
Bordoloi, Arunav
Issokson, Jacob
Levy, Ido
Vavilov, Maxim G.
Shabani, Javad
Manucharyan, Vladimir E.
contents The gatemon qubits, made of transparent superconducting-semiconducting Josephson junctions, typically have even weaker anharmonicity than the opaque AlOx-junction transmons. However, flux-frustrated gatemons can acquire a much stronger anharmonicity, originating from the interference of the higher-order harmonics of the supercurrent. Here we investigate this effect of enhanced anharmonicity in split-junction gatemon devices based on InAs-Al 2D heterostructure. We find that anharmonicity in excess of 100% can be routinely achieved at the half-integer flux sweet-spot without any need for electrical gating or excessive sensitivity to the offset charge noise. We verified that such intrinsically large anharmonicity enables our devices to be driven coherently with raw Rabi frequencies exceeding 100 MHz, without any pulse shaping, simplifying implementation and control compared to traditional gatemons and transmons. Furthermore, by analyzing a relatively high-resolution spectroscopy of the device transitions as a function of flux, we were able to extract fine details of the current-phase relation, to which transport measurements would hardly be sensitive. The strong anharmonicity of our anharmonic tunable transmons, along with their bare-bones design, can prove to be a precious resource that transparent superconducting-semiconducting junctions bring to quantum information processing.
format Preprint
id arxiv_https___arxiv_org_abs_2503_12288
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Strongly anharmonic flux-tunable transmon based on InAs-Al 2D heterostructure
Liu, Shukai
Bordoloi, Arunav
Issokson, Jacob
Levy, Ido
Vavilov, Maxim G.
Shabani, Javad
Manucharyan, Vladimir E.
Mesoscale and Nanoscale Physics
Quantum Physics
The gatemon qubits, made of transparent superconducting-semiconducting Josephson junctions, typically have even weaker anharmonicity than the opaque AlOx-junction transmons. However, flux-frustrated gatemons can acquire a much stronger anharmonicity, originating from the interference of the higher-order harmonics of the supercurrent. Here we investigate this effect of enhanced anharmonicity in split-junction gatemon devices based on InAs-Al 2D heterostructure. We find that anharmonicity in excess of 100% can be routinely achieved at the half-integer flux sweet-spot without any need for electrical gating or excessive sensitivity to the offset charge noise. We verified that such intrinsically large anharmonicity enables our devices to be driven coherently with raw Rabi frequencies exceeding 100 MHz, without any pulse shaping, simplifying implementation and control compared to traditional gatemons and transmons. Furthermore, by analyzing a relatively high-resolution spectroscopy of the device transitions as a function of flux, we were able to extract fine details of the current-phase relation, to which transport measurements would hardly be sensitive. The strong anharmonicity of our anharmonic tunable transmons, along with their bare-bones design, can prove to be a precious resource that transparent superconducting-semiconducting junctions bring to quantum information processing.
title Strongly anharmonic flux-tunable transmon based on InAs-Al 2D heterostructure
topic Mesoscale and Nanoscale Physics
Quantum Physics
url https://arxiv.org/abs/2503.12288