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Main Authors: Fujisawa, Kazunori, Carvalho, Bruno R., Venezuela, Pedro, Kang, Cheon-Soo, Kim, Yoong Ahm, Hayashi, Takuya, Terrones, Mauricio
Format: Preprint
Published: 2025
Subjects:
Online Access:https://arxiv.org/abs/2503.12459
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author Fujisawa, Kazunori
Carvalho, Bruno R.
Venezuela, Pedro
Kang, Cheon-Soo
Kim, Yoong Ahm
Hayashi, Takuya
Terrones, Mauricio
author_facet Fujisawa, Kazunori
Carvalho, Bruno R.
Venezuela, Pedro
Kang, Cheon-Soo
Kim, Yoong Ahm
Hayashi, Takuya
Terrones, Mauricio
contents Point defects, though atomically small, significantly influence the properties of 2D materials. A general method for characterizing point defect density ($n_{ D }$) in graphenic materials with arbitrary layer number ($n_{ L }$) is currently lacking. Here, we introduce the Graphene Atlas, a non-destructive Raman spectroscopy-based framework for defect quantification in diverse graphenic systems. We demonstrate that the relative fractions of the double-resonance D and 2D Raman bands, which arise from competing scattering processes, exhibit a universal relationship with $n_{ D }$, independent of $n_{ L }$. Plotting Raman data on a plane defined by defect-related and layer number-related parameters enables a direct and quantitative determination of $n_{ D }$ and $n_{ L }$. This Graphene Atlas provides a transformative tool for real-time defect quantification in scalable manufacturing of graphenic materials, bridging fundamental research and industrial applications. This framework establishes a new standard for defect characterization of graphenic systems, facilitating their optimization for advanced technological applications.
format Preprint
id arxiv_https___arxiv_org_abs_2503_12459
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle A Universal Raman Spectroscopic Framework for Defect Quantification in Mono-to-Multilayer Graphenic Materials: The Graphene Atlas
Fujisawa, Kazunori
Carvalho, Bruno R.
Venezuela, Pedro
Kang, Cheon-Soo
Kim, Yoong Ahm
Hayashi, Takuya
Terrones, Mauricio
Materials Science
Point defects, though atomically small, significantly influence the properties of 2D materials. A general method for characterizing point defect density ($n_{ D }$) in graphenic materials with arbitrary layer number ($n_{ L }$) is currently lacking. Here, we introduce the Graphene Atlas, a non-destructive Raman spectroscopy-based framework for defect quantification in diverse graphenic systems. We demonstrate that the relative fractions of the double-resonance D and 2D Raman bands, which arise from competing scattering processes, exhibit a universal relationship with $n_{ D }$, independent of $n_{ L }$. Plotting Raman data on a plane defined by defect-related and layer number-related parameters enables a direct and quantitative determination of $n_{ D }$ and $n_{ L }$. This Graphene Atlas provides a transformative tool for real-time defect quantification in scalable manufacturing of graphenic materials, bridging fundamental research and industrial applications. This framework establishes a new standard for defect characterization of graphenic systems, facilitating their optimization for advanced technological applications.
title A Universal Raman Spectroscopic Framework for Defect Quantification in Mono-to-Multilayer Graphenic Materials: The Graphene Atlas
topic Materials Science
url https://arxiv.org/abs/2503.12459