Indium selenides for next-generation low-power computing devices
Fuente:
arXiv
Guardado en:
| Autores principales: | Song, Seunguk, Altvater, Michael, Lee, Wonchan, Shin, Hyeon Suk, Glavin, Nicholas, Jariwala, Deep |
|---|---|
| Formato: | Preprint |
| Publicado: |
2025
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
2D ferroelectrics and ferroelectrics with 2D: materials and device prospects
por: Leblanc, Chloe, et al.
Publicado: (2024)
por: Leblanc, Chloe, et al.
Publicado: (2024)
Electrodeposition of amorphous molybdenum sulfo-selenide as a low-cost catalyst
por: Kendall, Lee, et al.
Publicado: (2024)
por: Kendall, Lee, et al.
Publicado: (2024)
Can a ferroelectric diode be a selector-less, universal, non-volatile memory?
por: Sarkar, Soumya, et al.
Publicado: (2025)
por: Sarkar, Soumya, et al.
Publicado: (2025)
Reconfigurable SWCNT ferroelectric field-effect transistor arrays
por: Rhee, Dongjoon, et al.
Publicado: (2024)
por: Rhee, Dongjoon, et al.
Publicado: (2024)
Materials for High Temperature Digital Electronics
por: Pradhan, Dhiren K., et al.
Publicado: (2024)
por: Pradhan, Dhiren K., et al.
Publicado: (2024)
Observation of giant remnant polarization in ultrathin AlScN at cryogenic temperatures
por: Song, Seunguk, et al.
Publicado: (2025)
por: Song, Seunguk, et al.
Publicado: (2025)
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
por: Leblanc, Chloe, et al.
Publicado: (2025)
por: Leblanc, Chloe, et al.
Publicado: (2025)
Compact computer controlled biaxial tensile device for low-temperature transport measurements of layered materials
por: Zaitsev-Zotov, S. V.
Publicado: (2023)
por: Zaitsev-Zotov, S. V.
Publicado: (2023)
Leakage Suppression Across Temperature in Al1-xScxN Thin Film Ferroelectric Capacitors through Boron Incorporation
por: Yousefian, Pedram, et al.
Publicado: (2025)
por: Yousefian, Pedram, et al.
Publicado: (2025)
Write Cycling Endurance Exceeding 1010 in Sub-50 nm Ferroelectric AlScN
por: Cho, Hyunmin, et al.
Publicado: (2025)
por: Cho, Hyunmin, et al.
Publicado: (2025)
Multistate ferroelectric diodes with high electroresistance based on van der Waals heterostructures
por: Sarkar, Soumya, et al.
Publicado: (2024)
por: Sarkar, Soumya, et al.
Publicado: (2024)
Reconfigurable, non-volatile control of optical anisotropy in ReS2 via ferroelectric gating
por: Rahaman, Mahfujur, et al.
Publicado: (2025)
por: Rahaman, Mahfujur, et al.
Publicado: (2025)
Coercive Field Reduction in Ultra-thin Al1-XScXN via Interfacial Engineering with a Scandium Electrode
por: Zhang, Yinuo, et al.
Publicado: (2025)
por: Zhang, Yinuo, et al.
Publicado: (2025)
Enhanced heat dissipation and lowered power consumption in electronics using two-dimensional hexagonal boron nitride coatings
por: R, Karthik, et al.
Publicado: (2024)
por: R, Karthik, et al.
Publicado: (2024)
Two-step conversion of metal and metal oxide precursor films to 2D transition metal dichalcogenides and heterostructures
por: Altvater, Michael, et al.
Publicado: (2024)
por: Altvater, Michael, et al.
Publicado: (2024)
Zinc selenide single crystals co-doped with active TM-ions of chromium, cobalt and iron
por: Naydenov, Sergei, et al.
Publicado: (2026)
por: Naydenov, Sergei, et al.
Publicado: (2026)
From design to device: challenges and opportunities in computational discovery of p-type transparent conductors
por: Woods-Robinson, Rachel, et al.
Publicado: (2024)
por: Woods-Robinson, Rachel, et al.
Publicado: (2024)
Surface-dominant transport in Weyl semimetal NbAs nanowires for next-generation interconnects
por: Cheon, Yeryun, et al.
Publicado: (2025)
por: Cheon, Yeryun, et al.
Publicado: (2025)
High-field Breakdown and Thermal Characterization of Indium Tin Oxide Transistors
por: Su, Haotian, et al.
Publicado: (2025)
por: Su, Haotian, et al.
Publicado: (2025)
ALD W-Doped SnO$_2$ TFTs for Indium-Free BEOL Electronics
por: Patil, Mansi Anil, et al.
Publicado: (2026)
por: Patil, Mansi Anil, et al.
Publicado: (2026)
Indium Hydroxide Ceramic Targets: A Breakthrough in High-Mobility Thin-Film Transistor Technology
por: Sadahira, Hikaru, et al.
Publicado: (2025)
por: Sadahira, Hikaru, et al.
Publicado: (2025)
Subthreshold Swing Behavior in Amorphous Indium-Gallium-Zinc-Oxide Transistors from Room to Cryogenic Temperatures
por: Tang, Hongwei, et al.
Publicado: (2025)
por: Tang, Hongwei, et al.
Publicado: (2025)
Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential
por: Mondal, Badal, et al.
Publicado: (2025)
por: Mondal, Badal, et al.
Publicado: (2025)
Simultaneous power generation and cooling using semiconductor-sensitized thermal cells
por: Hayashida, Atsushi, et al.
Publicado: (2025)
por: Hayashida, Atsushi, et al.
Publicado: (2025)
Experimental realisation of a universal inverse-design magnonic device
por: Zenbaa, Noura, et al.
Publicado: (2024)
por: Zenbaa, Noura, et al.
Publicado: (2024)
Ferroelectric AlScN thin films with enhanced polarization and low leakage enabled by high-power impulse magnetron sputtering
por: Messi, Federica, et al.
Publicado: (2025)
por: Messi, Federica, et al.
Publicado: (2025)
Cracking in polymer substrates for flexible devices and its mitigation
por: Ranka, Anush, et al.
Publicado: (2025)
por: Ranka, Anush, et al.
Publicado: (2025)
Contact resistance and interfacial engineering: Advances in high-performance 2D-TMD based devices
por: Liu, Xiongfang, et al.
Publicado: (2026)
por: Liu, Xiongfang, et al.
Publicado: (2026)
Leveraging both faces of polar semiconductor wafers for functional devices
por: van Deurzen, Len, et al.
Publicado: (2024)
por: van Deurzen, Len, et al.
Publicado: (2024)
Identifying and understanding the positive impact of defects for perovskites optoelectronic devices
por: Deng, Yu-Hao
Publicado: (2020)
por: Deng, Yu-Hao
Publicado: (2020)
Skyrmions: A review on materials perspective for future electronic devices
por: Sharma, Vineet Kumar, et al.
Publicado: (2024)
por: Sharma, Vineet Kumar, et al.
Publicado: (2024)
A highly sensitive, self-adhesive, biocompatible DLP 3D printed organohydrogel for flexible sensors and wearable devices
por: Zhang, Ze, et al.
Publicado: (2025)
por: Zhang, Ze, et al.
Publicado: (2025)
Color Centers in Hexagonal Boron Nitride
por: Kim, Suk Hyun, et al.
Publicado: (2024)
por: Kim, Suk Hyun, et al.
Publicado: (2024)
Enhancement in neuromorphic NbO2 memristive device switching at cryogenic temperatures
por: Mburu, Ted, et al.
Publicado: (2024)
por: Mburu, Ted, et al.
Publicado: (2024)
Phase-change materials for volatile threshold resistive switching and neuronal device applications
por: Chen, Huandong, et al.
Publicado: (2025)
por: Chen, Huandong, et al.
Publicado: (2025)
A device-level compact model for mushroom-type phase change memory
por: Menzel, Stephan, et al.
Publicado: (2025)
por: Menzel, Stephan, et al.
Publicado: (2025)
Formation of Beta-Indium Selenide Layers Grown via Selenium Passivation of InP(111)B Substrate
por: Wickramasinghe, Kaushini S., et al.
Publicado: (2024)
por: Wickramasinghe, Kaushini S., et al.
Publicado: (2024)
Electrochemical control of ferroelectricity in hafnia-based ferroelectric devices using reversible oxygen migration
por: Shao, M. H., et al.
Publicado: (2021)
por: Shao, M. H., et al.
Publicado: (2021)
Mimicking synaptic plasticity with wedged Pt/Co/Pt spin-orbit torque device
por: Chen, Shiwei, et al.
Publicado: (2024)
por: Chen, Shiwei, et al.
Publicado: (2024)
NiOx passivation in perovskite solar cells: from surface reactivity to device performance
por: Mohanraj, John, et al.
Publicado: (2024)
por: Mohanraj, John, et al.
Publicado: (2024)
Ejemplares similares
-
2D ferroelectrics and ferroelectrics with 2D: materials and device prospects
por: Leblanc, Chloe, et al.
Publicado: (2024) -
Electrodeposition of amorphous molybdenum sulfo-selenide as a low-cost catalyst
por: Kendall, Lee, et al.
Publicado: (2024) -
Can a ferroelectric diode be a selector-less, universal, non-volatile memory?
por: Sarkar, Soumya, et al.
Publicado: (2025) -
Reconfigurable SWCNT ferroelectric field-effect transistor arrays
por: Rhee, Dongjoon, et al.
Publicado: (2024) -
Materials for High Temperature Digital Electronics
por: Pradhan, Dhiren K., et al.
Publicado: (2024)