Switching on and off the spin polarization of the conduction band in antiferromagnetic bilayer transistors
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arXiv
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| Auteurs principaux: | , , , , , , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866929762140684288 |
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| author | Yao, Fengrui Liao, Menghan Gibertini, Marco Cheon, Cheol-Yeon Lin, Xiaohanwen Wu, Fan Watanabe, Kenji Taniguchi, Takashi Gutiérrez-Lezama, Ignacio Morpurgo, Alberto F. |
| author_facet | Yao, Fengrui Liao, Menghan Gibertini, Marco Cheon, Cheol-Yeon Lin, Xiaohanwen Wu, Fan Watanabe, Kenji Taniguchi, Takashi Gutiérrez-Lezama, Ignacio Morpurgo, Alberto F. |
| contents | Antiferromagnetic conductors with suitably broken spatial symmetries host spin-polarized bands, which lead to transport phenomena commonly observed in metallic ferromagnets. In bulk materials, it is the given crystalline structure that determines whether symmetries are broken and spin-polarized bands are present. Here we demonstrate experimentally that double-gate transistors realized on bilayers of van der Waals antiferromagnetic semiconductor CrPS4 allow the relevant symmetry to be controlled by a perpendicular electric displacement field. Such a level of control enables the spin-polarization of the conduction band to be switched on and off. Because conduction band states with opposite spin-polarizations are hosted in the different layers and are spatially separated, these devices also give control over the magnetization of the electrons that are accumulated electrostatically. Our experiments show that double-gated CrPS4 transistors provide a viable platform to create gate-induced conductors with near unity spin polarization at the Fermi level, as well as devices with a full electrostatic control of the total magnetization of the system. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_13000 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Switching on and off the spin polarization of the conduction band in antiferromagnetic bilayer transistors Yao, Fengrui Liao, Menghan Gibertini, Marco Cheon, Cheol-Yeon Lin, Xiaohanwen Wu, Fan Watanabe, Kenji Taniguchi, Takashi Gutiérrez-Lezama, Ignacio Morpurgo, Alberto F. Mesoscale and Nanoscale Physics Materials Science Antiferromagnetic conductors with suitably broken spatial symmetries host spin-polarized bands, which lead to transport phenomena commonly observed in metallic ferromagnets. In bulk materials, it is the given crystalline structure that determines whether symmetries are broken and spin-polarized bands are present. Here we demonstrate experimentally that double-gate transistors realized on bilayers of van der Waals antiferromagnetic semiconductor CrPS4 allow the relevant symmetry to be controlled by a perpendicular electric displacement field. Such a level of control enables the spin-polarization of the conduction band to be switched on and off. Because conduction band states with opposite spin-polarizations are hosted in the different layers and are spatially separated, these devices also give control over the magnetization of the electrons that are accumulated electrostatically. Our experiments show that double-gated CrPS4 transistors provide a viable platform to create gate-induced conductors with near unity spin polarization at the Fermi level, as well as devices with a full electrostatic control of the total magnetization of the system. |
| title | Switching on and off the spin polarization of the conduction band in antiferromagnetic bilayer transistors |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2503.13000 |