Gate electrode-induced nonreciprocal resistance in topological insulators
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arXiv
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| Autores principales: | , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866916654491893760 |
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| author | Kölling, Sofie Westerhof, Florian R. Brinkman, Alexander |
| author_facet | Kölling, Sofie Westerhof, Florian R. Brinkman, Alexander |
| contents | A common method of controlling the chemical potential in topological insulators is applying a gate electrode. Simultaneously applying high source-drain bias currents can lead to parasitic effects in such devices. We derive that these parasitic effects lead to a gradient in the Hall effect along the current lead of a Hall bar. Consequently, nonreciprocal effects in both longitudinal and Hall voltages appear upon reversing the bias. These effects scale similarly to the magnetochiral anisotropy, requiring detailed analysis to make a distinction. Experimentally we show that nonreciprocal effects can appear in materials where magnetochiral anisotropy is not expected while a top gate is present. Without gate electrode, this nonreciprocal effect is found to be absent. These results show the importance of considering and, if possible, excluding gate electrode-induced effects when searching for nonreciprocal resistance intrinsic to a material. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_13141 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Gate electrode-induced nonreciprocal resistance in topological insulators Kölling, Sofie Westerhof, Florian R. Brinkman, Alexander Mesoscale and Nanoscale Physics A common method of controlling the chemical potential in topological insulators is applying a gate electrode. Simultaneously applying high source-drain bias currents can lead to parasitic effects in such devices. We derive that these parasitic effects lead to a gradient in the Hall effect along the current lead of a Hall bar. Consequently, nonreciprocal effects in both longitudinal and Hall voltages appear upon reversing the bias. These effects scale similarly to the magnetochiral anisotropy, requiring detailed analysis to make a distinction. Experimentally we show that nonreciprocal effects can appear in materials where magnetochiral anisotropy is not expected while a top gate is present. Without gate electrode, this nonreciprocal effect is found to be absent. These results show the importance of considering and, if possible, excluding gate electrode-induced effects when searching for nonreciprocal resistance intrinsic to a material. |
| title | Gate electrode-induced nonreciprocal resistance in topological insulators |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2503.13141 |