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| Main Authors: | , , , |
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| Format: | Preprint |
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2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2503.13850 |
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| _version_ | 1866917392979853312 |
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| author | Zhang, Long Ni, Guangxin He, Junjie Gao, Guoying |
| author_facet | Zhang, Long Ni, Guangxin He, Junjie Gao, Guoying |
| contents | Altermagnets with nonrelativistic momentum-dependent spin splitting and compensated net magnetic moments have recently garnered significant interest in spintronics, particularly as pinning layers in magnetic tunnel junctions (MTJs). However, room temperature (RT) altermagnet-based MTJs with tunable tunneling magnetoresistance (TMR) or electroresistance (TER) modulated by multiferroicity remain largely unexplored. Here, we propose an experimentally fabricable above-RT multiferroic MTJ, comprising an altermagnetic metal, ferroelectric barrier, and ferromagnetic metal-epitomized by a CrSb/In2Se3/Fe3GaTe2 heterostructure. Our calculations with first-principles and nonequilibrium Green function method indicate that the architecture enables magnetically switchable TER, electrically tunable TMR, and dual-mode controllable spin filtering. To disentangle the roles of ferroelectricity and the tunnel barrier, nonferroelectric Sb2Se3 and a vacuum gap are exploited as control cases. Remarkably, the system achieves TMR up to 2308%, TER of 707%, and near-perfect spin filtering efficiency. Both TMR and TER are considerable for CrSb/In2Se3/Fe3GaTe2 with either Cr or Sb interface. The transport performance is robust under bias voltage. These findings demonstrate the above-RT multiferroic altermagnet-based MTJs and highlight their exciting potential as a versatile platform for next-generation spin dynamics, magnetic sensing, and quantum logic nanodevices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_13850 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Above room temperature multiferroic tunnel junction with the altermagnetic metal CrSb Zhang, Long Ni, Guangxin He, Junjie Gao, Guoying Materials Science Applied Physics Computational Physics Altermagnets with nonrelativistic momentum-dependent spin splitting and compensated net magnetic moments have recently garnered significant interest in spintronics, particularly as pinning layers in magnetic tunnel junctions (MTJs). However, room temperature (RT) altermagnet-based MTJs with tunable tunneling magnetoresistance (TMR) or electroresistance (TER) modulated by multiferroicity remain largely unexplored. Here, we propose an experimentally fabricable above-RT multiferroic MTJ, comprising an altermagnetic metal, ferroelectric barrier, and ferromagnetic metal-epitomized by a CrSb/In2Se3/Fe3GaTe2 heterostructure. Our calculations with first-principles and nonequilibrium Green function method indicate that the architecture enables magnetically switchable TER, electrically tunable TMR, and dual-mode controllable spin filtering. To disentangle the roles of ferroelectricity and the tunnel barrier, nonferroelectric Sb2Se3 and a vacuum gap are exploited as control cases. Remarkably, the system achieves TMR up to 2308%, TER of 707%, and near-perfect spin filtering efficiency. Both TMR and TER are considerable for CrSb/In2Se3/Fe3GaTe2 with either Cr or Sb interface. The transport performance is robust under bias voltage. These findings demonstrate the above-RT multiferroic altermagnet-based MTJs and highlight their exciting potential as a versatile platform for next-generation spin dynamics, magnetic sensing, and quantum logic nanodevices. |
| title | Above room temperature multiferroic tunnel junction with the altermagnetic metal CrSb |
| topic | Materials Science Applied Physics Computational Physics |
| url | https://arxiv.org/abs/2503.13850 |