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Bibliographic Details
Main Authors:	Lee, Jung-Woo, Kim, Jieun, Edgeton, Anthony L., Paudel, Tula R., Campbell, Neil, Noesges, Brenton A., Schad, Jonathon L., Yang, Jiangfeng, Wada, Katelyn, Moreno-Ramirez, Jonathan, Parker, Nicholas, Gan, Yulin, Lee, Hyungwoo, Christensen, Dennis V., Eom, Kitae, Kang, Jong-Hoon, Chen, Yunzhong, Tybell, Thomas, Pryds, Nini, Tenne, Dmitri A., Brillson, Leonard J., Rzchowski, Mark S., Tsymbal, Evgeny Y., Eom, Chang-Beom
Format:	Preprint
Published:	2025
Subjects:	Materials Science
Online Access:	https://arxiv.org/abs/2503.13878
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Table of Contents:

Point defects in complex oxide thin films play a critical role in determining material properties but remain challenging to control with precision. This study introduces metal-organic pulsed laser deposition (MOPLD) as a novel synthesis technique for the precise manipulation of these defects, using LaAlO3/SrTiO3 (LAO/STO) as a model system. By employing titanium tetraisopropoxide (TTIP) as the titanium precursor, MOPLD achieves refined stoichiometric control in STO layers while preserving their structural integrity, as confirmed by X-ray diffraction and Raman spectroscopy. Depth-resolved cathodoluminescence spectroscopy and density functional theory calculations reveal that increasing TTIP flux during STO growth enhances the [TiSr]/[VSr] ratio and reduces the [VO] concentration. These defect modifications lead to a significant improvement in the low-temperature mobility of the two-dimensional electron gas at the LAO/STO interface, evidenced by distinct Shubnikov-de Haas oscillations. This work underscores the potential of MOPLD to advance defect engineering in complex oxide heterostructures, opening new avenues for quantum material research.

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