Terahertz radiation generation by laser-resonant excitation of terahertz surface magnetoplasmons on a graphene-n-InSb semiconductor interface
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arXiv
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| Auteurs principaux: | , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866909542205358080 |
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| author | Srivastav, Rohit Kumar Kundu, Mrityunjay |
| author_facet | Srivastav, Rohit Kumar Kundu, Mrityunjay |
| contents | We propose a method for the laser-excitation of terahertz surface magnetoplasmons via the linear mode conversion of terahertz radiation on a graphene sheet deposited on an n-type semiconductor in presence of an external magnetic field parallel to the semiconductor surface. An obliquely incident p-polarized laser beam interacting with the graphene n-InSb semiconductor surface, imparts linear oscillatory velocity to the free electrons. This oscillatory velocity couples with the modulated electron density to generate a linear current density, which resonantly excites terahertz surface magnetoplasmons. It is shown that the amplitude of terahertz surface magnetoplasmons wave can be tuned by adjusting the external magnetic field ($\text{B}_{0}$), the graphene's Fermi energy ($\text{E}_\text{F}$), the semiconductor's temperature (T), and the incident angle ($θ$) of laser. This mechanism has the potential to enable the development of an actively tunable plasmonic device. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_14532 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Terahertz radiation generation by laser-resonant excitation of terahertz surface magnetoplasmons on a graphene-n-InSb semiconductor interface Srivastav, Rohit Kumar Kundu, Mrityunjay Mesoscale and Nanoscale Physics Optics Plasma Physics We propose a method for the laser-excitation of terahertz surface magnetoplasmons via the linear mode conversion of terahertz radiation on a graphene sheet deposited on an n-type semiconductor in presence of an external magnetic field parallel to the semiconductor surface. An obliquely incident p-polarized laser beam interacting with the graphene n-InSb semiconductor surface, imparts linear oscillatory velocity to the free electrons. This oscillatory velocity couples with the modulated electron density to generate a linear current density, which resonantly excites terahertz surface magnetoplasmons. It is shown that the amplitude of terahertz surface magnetoplasmons wave can be tuned by adjusting the external magnetic field ($\text{B}_{0}$), the graphene's Fermi energy ($\text{E}_\text{F}$), the semiconductor's temperature (T), and the incident angle ($θ$) of laser. This mechanism has the potential to enable the development of an actively tunable plasmonic device. |
| title | Terahertz radiation generation by laser-resonant excitation of terahertz surface magnetoplasmons on a graphene-n-InSb semiconductor interface |
| topic | Mesoscale and Nanoscale Physics Optics Plasma Physics |
| url | https://arxiv.org/abs/2503.14532 |