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Orientation-Dependent \b{eta}-Ga2O3 Heterojunction Diode with Atomic Layer Deposition (ALD) Grown NiO

Fuente: arXiv

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Dettagli Bibliografici
Autori principali:	Liu, Yizheng, Witsell, Shane M. W., Conley, John F., Krishnamoorthy, Sriram
Natura:	Preprint
Pubblicazione:	2025
Soggetti:	Materials Science Applied Physics
Accesso online:	Acceder al recurso
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