Designer three-dimensional electronic bands in asymmetric transition metal dichalcogenide heterostructures

Fuente: arXiv
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Main Authors: Clark, Oliver J., Azhar, Anugrah, Chambers, Ben A., McEwen, Daniel, Vu, Thi-Hai-Yen, Bhuiyan, M. Tofajjol H., Belosludov, Rodion V., Bostwick, Aaron, Jozwiak, Chris, Rotenberg, Eli, Lee, Seng Huat, Mao, Zhiqiang, Balakrishnan, Geetha, Mazzola, Federico, Harmer, Sarah L., Fuhrer, Michael S., Bahramy, M. Saeed, Edmonds, Mark. T.
Format: Preprint
Published: 2025
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author Clark, Oliver J.
Azhar, Anugrah
Chambers, Ben A.
McEwen, Daniel
Vu, Thi-Hai-Yen
Bhuiyan, M. Tofajjol H.
Belosludov, Rodion V.
Bostwick, Aaron
Jozwiak, Chris
Rotenberg, Eli
Lee, Seng Huat
Mao, Zhiqiang
Balakrishnan, Geetha
Mazzola, Federico
Harmer, Sarah L.
Fuhrer, Michael S.
Bahramy, M. Saeed
Edmonds, Mark. T.
author_facet Clark, Oliver J.
Azhar, Anugrah
Chambers, Ben A.
McEwen, Daniel
Vu, Thi-Hai-Yen
Bhuiyan, M. Tofajjol H.
Belosludov, Rodion V.
Bostwick, Aaron
Jozwiak, Chris
Rotenberg, Eli
Lee, Seng Huat
Mao, Zhiqiang
Balakrishnan, Geetha
Mazzola, Federico
Harmer, Sarah L.
Fuhrer, Michael S.
Bahramy, M. Saeed
Edmonds, Mark. T.
contents Van der Waals materials enable the construction of atomically sharp interfaces between compounds with distinct crystal and electronic properties. This is dramatically exploited in moiré systems, where a lattice mismatch or twist between monolayers generates an emergent in-plane periodicity, giving rise to electronic properties absent in the constituent materials. In contrast, vertical superlattices, formed by stacking dissimilar materials in the out-of-plane direction on the nanometer scale, have received far less attention despite their potential to realize analogous emergent phenomena in three dimensions. Through angle-resolved photoemission spectroscopy and density functional theory, we investigate six-to-eight-layer transition metal dichalcogenide (TMD) heterostructures constructed from pairs of stacked few-layer materials. Counterintuitively, we find that even these single superlattice units can host fully-delocalised bands, evidencing a robust coherent interlayer coupling across lattice-mismatched interfaces over extended spatial scales. We show how uncompensated semimetallic phases and energetically-mismatched topological surface states are readily and exclusively stabilized within such asymmetrical architectures. These findings establish two-component heterostructures in the intermediate layer-regime as platforms to invoke and control unprecedented combinations and instances of the diverse quantum phases native to many-layer TMDs.
format Preprint
id arxiv_https___arxiv_org_abs_2503_17947
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Designer three-dimensional electronic bands in asymmetric transition metal dichalcogenide heterostructures
Clark, Oliver J.
Azhar, Anugrah
Chambers, Ben A.
McEwen, Daniel
Vu, Thi-Hai-Yen
Bhuiyan, M. Tofajjol H.
Belosludov, Rodion V.
Bostwick, Aaron
Jozwiak, Chris
Rotenberg, Eli
Lee, Seng Huat
Mao, Zhiqiang
Balakrishnan, Geetha
Mazzola, Federico
Harmer, Sarah L.
Fuhrer, Michael S.
Bahramy, M. Saeed
Edmonds, Mark. T.
Materials Science
Van der Waals materials enable the construction of atomically sharp interfaces between compounds with distinct crystal and electronic properties. This is dramatically exploited in moiré systems, where a lattice mismatch or twist between monolayers generates an emergent in-plane periodicity, giving rise to electronic properties absent in the constituent materials. In contrast, vertical superlattices, formed by stacking dissimilar materials in the out-of-plane direction on the nanometer scale, have received far less attention despite their potential to realize analogous emergent phenomena in three dimensions. Through angle-resolved photoemission spectroscopy and density functional theory, we investigate six-to-eight-layer transition metal dichalcogenide (TMD) heterostructures constructed from pairs of stacked few-layer materials. Counterintuitively, we find that even these single superlattice units can host fully-delocalised bands, evidencing a robust coherent interlayer coupling across lattice-mismatched interfaces over extended spatial scales. We show how uncompensated semimetallic phases and energetically-mismatched topological surface states are readily and exclusively stabilized within such asymmetrical architectures. These findings establish two-component heterostructures in the intermediate layer-regime as platforms to invoke and control unprecedented combinations and instances of the diverse quantum phases native to many-layer TMDs.
title Designer three-dimensional electronic bands in asymmetric transition metal dichalcogenide heterostructures
topic Materials Science
url https://arxiv.org/abs/2503.17947