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| Main Authors: | , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2503.17954 |
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| _version_ | 1866912289427292160 |
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| author | Huo, Yong-Kun Feng, Hui-Feng Yao, Chao Song, Zhong-Xiao Guo, Zhi-Xin |
| author_facet | Huo, Yong-Kun Feng, Hui-Feng Yao, Chao Song, Zhong-Xiao Guo, Zhi-Xin |
| contents | While nanoscale electronic logic circuits are well-established, the development of na-noscale thermal logic circuits has been slow, mainly due to the absence of efficient and controllable nonvolatile field-effect thermal transistors. In this study, we introduce a novel approach that leverages ferroelectric orthorhombic hafnium dioxide (o-HfO2) thin films to achieve electrically switchable nonvolatile field-effect thermal transistors. Using molecular dynamics simulations and machine learning potentials, we demonstrate that a 24 nm o-HfO2 film can exhibit four distinct, reversible states of thermal conductivity. Notably, these states achieve a maximum switching ratio of 171% under 2% tensile strain. Our results underscore the potential of ferroelectric materials, particularly o-HfO2, in advancing thermal logic circuits by enabling multiple, stable thermal conductivity states controlled by electric fields. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_17954 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | High-Efficiency Electrically Switchable Nonvolatile Thermal Transistor with Multiple Thermal Conductivity States Based on Ferroelectric HfO2 Huo, Yong-Kun Feng, Hui-Feng Yao, Chao Song, Zhong-Xiao Guo, Zhi-Xin Materials Science While nanoscale electronic logic circuits are well-established, the development of na-noscale thermal logic circuits has been slow, mainly due to the absence of efficient and controllable nonvolatile field-effect thermal transistors. In this study, we introduce a novel approach that leverages ferroelectric orthorhombic hafnium dioxide (o-HfO2) thin films to achieve electrically switchable nonvolatile field-effect thermal transistors. Using molecular dynamics simulations and machine learning potentials, we demonstrate that a 24 nm o-HfO2 film can exhibit four distinct, reversible states of thermal conductivity. Notably, these states achieve a maximum switching ratio of 171% under 2% tensile strain. Our results underscore the potential of ferroelectric materials, particularly o-HfO2, in advancing thermal logic circuits by enabling multiple, stable thermal conductivity states controlled by electric fields. |
| title | High-Efficiency Electrically Switchable Nonvolatile Thermal Transistor with Multiple Thermal Conductivity States Based on Ferroelectric HfO2 |
| topic | Materials Science |
| url | https://arxiv.org/abs/2503.17954 |