Subvolt high-speed free-space modulator with electro-optic metasurface
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| Main Authors: | , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866918426848526336 |
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| author | Soma, Go Ariu, Koto Karakida, Seidai Tsubai, Yusuke Tanemura, Takuo |
| author_facet | Soma, Go Ariu, Koto Karakida, Seidai Tsubai, Yusuke Tanemura, Takuo |
| contents | Active metasurfaces incorporating electro-optic (EO) materials enable high-speed free-space optical modulators that show great promise for a wide range of emerging applications, including free-space optical communication, light detection and ranging, and optical computing. However, the limited light-matter interaction lengths in ultrathin metasurfaces typically require high driving voltages exceeding tens of volts. Here we present ultralow-voltage, high-speed free-space optical modulators based on silicon-organic-hybrid metasurfaces with dimerized-grating-based nanostructures. By exploiting a high-Q quasi-bound state in the continuum, normally incident light is effectively trapped within a submicrometer-scale silicon slot region embedded with organic EO material. Consequently, highly efficient modulation is obtained, enabling data transmission at 50 Mbps and 1.6 Gbps with driving voltages of only 0.2 V and 1 V, respectively. These unprecedented metasurface modulators operating at complementary metal-oxide-semiconductor (CMOS)-compatible voltage levels provide the pathway toward energy-efficient high-speed active metasurface devices. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2503_17986 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Subvolt high-speed free-space modulator with electro-optic metasurface Soma, Go Ariu, Koto Karakida, Seidai Tsubai, Yusuke Tanemura, Takuo Optics Applied Physics Active metasurfaces incorporating electro-optic (EO) materials enable high-speed free-space optical modulators that show great promise for a wide range of emerging applications, including free-space optical communication, light detection and ranging, and optical computing. However, the limited light-matter interaction lengths in ultrathin metasurfaces typically require high driving voltages exceeding tens of volts. Here we present ultralow-voltage, high-speed free-space optical modulators based on silicon-organic-hybrid metasurfaces with dimerized-grating-based nanostructures. By exploiting a high-Q quasi-bound state in the continuum, normally incident light is effectively trapped within a submicrometer-scale silicon slot region embedded with organic EO material. Consequently, highly efficient modulation is obtained, enabling data transmission at 50 Mbps and 1.6 Gbps with driving voltages of only 0.2 V and 1 V, respectively. These unprecedented metasurface modulators operating at complementary metal-oxide-semiconductor (CMOS)-compatible voltage levels provide the pathway toward energy-efficient high-speed active metasurface devices. |
| title | Subvolt high-speed free-space modulator with electro-optic metasurface |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2503.17986 |