Design of an aluminum nitride based electro-optic phase modulator and photonic switch for next generation scalable photonic integrated circuits
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arXiv
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| Autores principales: | , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866916660924907520 |
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| author | Icli, Suat Chaudhuri, Rangana Banerjee Jordan, Elena Salahshoori, Fatemeh Mehlstäubler, Tanja E. |
| author_facet | Icli, Suat Chaudhuri, Rangana Banerjee Jordan, Elena Salahshoori, Fatemeh Mehlstäubler, Tanja E. |
| contents | Electro-optic modulators are fundamental components in atomic physics experiments, including trapped-ion systems used in precision metrology and quantum computing. To enable scalable photonic integration, we design and analyze an integrated photonic electro-optic phase modulator and switch at 411 nm for ytterbium ($Yb^{+}$) ions using aluminum nitride (AlN) waveguides. We employ finite element method (FEM) simulations to optimize optical confinement, RF impedance matching, and electro-optic modulation efficiency. The phase modulator achieves a DC $V_πL$ of 178 V cm for TE polarization. The photonic switch, designed with a push-pull electrode configuration, demonstrates a $V_πL$ of 24 V cm, enabling efficient operation at lower voltages. These results highlight AlN as a candidate for ultraviolet photonic integrated circuits, facilitating high-speed optical modulation for trapped-ion applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_18861 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Design of an aluminum nitride based electro-optic phase modulator and photonic switch for next generation scalable photonic integrated circuits Icli, Suat Chaudhuri, Rangana Banerjee Jordan, Elena Salahshoori, Fatemeh Mehlstäubler, Tanja E. Applied Physics Optics Electro-optic modulators are fundamental components in atomic physics experiments, including trapped-ion systems used in precision metrology and quantum computing. To enable scalable photonic integration, we design and analyze an integrated photonic electro-optic phase modulator and switch at 411 nm for ytterbium ($Yb^{+}$) ions using aluminum nitride (AlN) waveguides. We employ finite element method (FEM) simulations to optimize optical confinement, RF impedance matching, and electro-optic modulation efficiency. The phase modulator achieves a DC $V_πL$ of 178 V cm for TE polarization. The photonic switch, designed with a push-pull electrode configuration, demonstrates a $V_πL$ of 24 V cm, enabling efficient operation at lower voltages. These results highlight AlN as a candidate for ultraviolet photonic integrated circuits, facilitating high-speed optical modulation for trapped-ion applications. |
| title | Design of an aluminum nitride based electro-optic phase modulator and photonic switch for next generation scalable photonic integrated circuits |
| topic | Applied Physics Optics |
| url | https://arxiv.org/abs/2503.18861 |