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| Main Authors: | , , , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2503.18894 |
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| _version_ | 1866908288585564160 |
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| author | Vlassiouk, Ivan V. Wu, Yueh-Chun Puretzky, Alexander Liang, Liangbo Lasseter, John Dryzhakov, Bogdan Gallagher, Ian Ghosh, Sujoy Lavrik, Nickolay Dyck, Ondrej Lupini, Andrew R. Checa, Marti Collins, Liam Zhao, Huan Likhi, Farzana Xiao, Kai Ivanov, Ilia Glasgow, David Tselev, Alexander Lawrie, Benjamin Smirnov, Sergei Randolph, Steven |
| author_facet | Vlassiouk, Ivan V. Wu, Yueh-Chun Puretzky, Alexander Liang, Liangbo Lasseter, John Dryzhakov, Bogdan Gallagher, Ian Ghosh, Sujoy Lavrik, Nickolay Dyck, Ondrej Lupini, Andrew R. Checa, Marti Collins, Liam Zhao, Huan Likhi, Farzana Xiao, Kai Ivanov, Ilia Glasgow, David Tselev, Alexander Lawrie, Benjamin Smirnov, Sergei Randolph, Steven |
| contents | Recently, numerous techniques have been reported for generating optically active defects in exfoliated hexagonal boron nitride (hBN), which hold transformative potential for quantum photonic devices. However, achieving on-demand generation of desirable defect types in scalable hBN films remains a significant challenge. Here, we demonstrate that formation of negative boron vacancy defects, VB-, in suspended, large-area CVD-grown hBN is strongly dependent on the type of bombarding particles (ions, neutrons, and electrons) and irradiation conditions. In contrast to suspended hBN, defect formation in substrate-supported hBN is more complex due to the uncontrollable generation of secondary particles from the substrate, and the outcome strongly depends on the thickness of the hBN. We identify different defect types by correlating spectroscopic and optically detected magnetic resonance features, distinguishing boron vacancies (formed by light ions and neutrons) from other optically active defects emitting at 650 nm assigned to anti-site nitrogen vacancy (NBVN) and reveal the presence of additional dark paramagnetic defects that influence spin-lattice relaxation time (T1) and zero-field splitting parameters, all of which strongly depend on the defect density. These results underscore the potential for precisely engineered defect formation in large-scale CVD-grown hBN, paving the way for the scalable fabrication of quantum photonic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_18894 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Defect Engineering in Large-Scale CVD-Grown Hexagonal Boron Nitride: Formation, Spectroscopy, and Spin Relaxation Dynamics Vlassiouk, Ivan V. Wu, Yueh-Chun Puretzky, Alexander Liang, Liangbo Lasseter, John Dryzhakov, Bogdan Gallagher, Ian Ghosh, Sujoy Lavrik, Nickolay Dyck, Ondrej Lupini, Andrew R. Checa, Marti Collins, Liam Zhao, Huan Likhi, Farzana Xiao, Kai Ivanov, Ilia Glasgow, David Tselev, Alexander Lawrie, Benjamin Smirnov, Sergei Randolph, Steven Materials Science Recently, numerous techniques have been reported for generating optically active defects in exfoliated hexagonal boron nitride (hBN), which hold transformative potential for quantum photonic devices. However, achieving on-demand generation of desirable defect types in scalable hBN films remains a significant challenge. Here, we demonstrate that formation of negative boron vacancy defects, VB-, in suspended, large-area CVD-grown hBN is strongly dependent on the type of bombarding particles (ions, neutrons, and electrons) and irradiation conditions. In contrast to suspended hBN, defect formation in substrate-supported hBN is more complex due to the uncontrollable generation of secondary particles from the substrate, and the outcome strongly depends on the thickness of the hBN. We identify different defect types by correlating spectroscopic and optically detected magnetic resonance features, distinguishing boron vacancies (formed by light ions and neutrons) from other optically active defects emitting at 650 nm assigned to anti-site nitrogen vacancy (NBVN) and reveal the presence of additional dark paramagnetic defects that influence spin-lattice relaxation time (T1) and zero-field splitting parameters, all of which strongly depend on the defect density. These results underscore the potential for precisely engineered defect formation in large-scale CVD-grown hBN, paving the way for the scalable fabrication of quantum photonic devices. |
| title | Defect Engineering in Large-Scale CVD-Grown Hexagonal Boron Nitride: Formation, Spectroscopy, and Spin Relaxation Dynamics |
| topic | Materials Science |
| url | https://arxiv.org/abs/2503.18894 |