Creation of Negatively Charged GeV and SnV centers in Nanodiamonds via Ion Implantation

Fuente: arXiv
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Hauptverfasser: Sachero, Selene, Waltrich, Richard, Corte, Emilio, Tchernij, Sviatoslav Ditalia, Kubanek, Alexander
Format: Preprint
Veröffentlicht: 2025
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author Sachero, Selene
Waltrich, Richard
Corte, Emilio
Tchernij, Sviatoslav Ditalia
Kubanek, Alexander
author_facet Sachero, Selene
Waltrich, Richard
Corte, Emilio
Tchernij, Sviatoslav Ditalia
Kubanek, Alexander
contents Solid state quantum emitters, in particular group-IV vacancy centers in diamond, are at the forefront of research in quantum technologies due to their unique optical and spin properties. Reduction of the diamond host size to the nanoscale enables new opportunities in terms of integration and scalability. However, creating optically coherent quantum emitters in nanodiamonds remains a major challenge. Here, we present the fabrication of germanium- and tin- vacancy centers by means of ion implantation. We describe the fabrication process and present the optical properties of the created color centers. We achieve high purity single photon emission via resonant excitation and strong coherent drive of a SnV$^-$ center. The successful integration of heavier group-IV vacancy centers in nanodiamonds paves the way for further advances in fields like hybrid quantum photonics or sensing on the nanoscale.
format Preprint
id arxiv_https___arxiv_org_abs_2503_19490
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Creation of Negatively Charged GeV and SnV centers in Nanodiamonds via Ion Implantation
Sachero, Selene
Waltrich, Richard
Corte, Emilio
Tchernij, Sviatoslav Ditalia
Kubanek, Alexander
Quantum Physics
Solid state quantum emitters, in particular group-IV vacancy centers in diamond, are at the forefront of research in quantum technologies due to their unique optical and spin properties. Reduction of the diamond host size to the nanoscale enables new opportunities in terms of integration and scalability. However, creating optically coherent quantum emitters in nanodiamonds remains a major challenge. Here, we present the fabrication of germanium- and tin- vacancy centers by means of ion implantation. We describe the fabrication process and present the optical properties of the created color centers. We achieve high purity single photon emission via resonant excitation and strong coherent drive of a SnV$^-$ center. The successful integration of heavier group-IV vacancy centers in nanodiamonds paves the way for further advances in fields like hybrid quantum photonics or sensing on the nanoscale.
title Creation of Negatively Charged GeV and SnV centers in Nanodiamonds via Ion Implantation
topic Quantum Physics
url https://arxiv.org/abs/2503.19490