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Hauptverfasser: Li, Chi, Xing, Kaijian, Zhai, Wenhao, Sortino, Luca, Tittl, Andreas, Aharonovich, Igor, Fuhrer, Michael S., Watanabe, Kenji, Taniguchi, Takashi, Ou, Qingdong, Dong, Zhaogang, Maier, Stefan A., Ren, Haoran
Format: Preprint
Veröffentlicht: 2025
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Online-Zugang:https://arxiv.org/abs/2503.19565
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author Li, Chi
Xing, Kaijian
Zhai, Wenhao
Sortino, Luca
Tittl, Andreas
Aharonovich, Igor
Fuhrer, Michael S.
Watanabe, Kenji
Taniguchi, Takashi
Ou, Qingdong
Dong, Zhaogang
Maier, Stefan A.
Ren, Haoran
author_facet Li, Chi
Xing, Kaijian
Zhai, Wenhao
Sortino, Luca
Tittl, Andreas
Aharonovich, Igor
Fuhrer, Michael S.
Watanabe, Kenji
Taniguchi, Takashi
Ou, Qingdong
Dong, Zhaogang
Maier, Stefan A.
Ren, Haoran
contents In transition metal dichalcogenides, the valley degree of freedom directly couples valley-polarised excitons - excited by circularly polarised light - to valley-dependent chiral photons, enabling ultrafast light-driven valleytronics. However, achieving fully integrated valley optoelectronics - incorporating on-chip generation, selective routing, and electrical readout of valley-dependent chiral photons - remains an unresolved challenge. We present a valley-driven hybrid nanophotonic-optoelectronic circuit that integrates chirality-selective meta-waveguide photodetectors with transition metal dichalcogenides. At room temperature, our purposely designed meta-waveguide device generates near-unity valley-dependent chiral photons in the second harmonic generation from an encapsulated tungsten disulfide monolayer and selectively couples them to unidirectional waveguide modes, achieving an exceptional polarisation selectivity of 0.97. These valley-dependent waveguide modes were subsequently detected by atomically thin few-layer tungsten diselenide photodetectors, exclusively responsive to the above-bandgap upconverted photons, thereby enabling all-on-chip processing of valley-multiplexed images. Our demonstration bridges a critical gap in lightwave valleytronics, paving the way for compact, scalable valley information processing and fostering the development of light-based valleytronic quantum technologies.
format Preprint
id arxiv_https___arxiv_org_abs_2503_19565
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Valley optoelectronics based on meta-waveguide photodetectors
Li, Chi
Xing, Kaijian
Zhai, Wenhao
Sortino, Luca
Tittl, Andreas
Aharonovich, Igor
Fuhrer, Michael S.
Watanabe, Kenji
Taniguchi, Takashi
Ou, Qingdong
Dong, Zhaogang
Maier, Stefan A.
Ren, Haoran
Optics
In transition metal dichalcogenides, the valley degree of freedom directly couples valley-polarised excitons - excited by circularly polarised light - to valley-dependent chiral photons, enabling ultrafast light-driven valleytronics. However, achieving fully integrated valley optoelectronics - incorporating on-chip generation, selective routing, and electrical readout of valley-dependent chiral photons - remains an unresolved challenge. We present a valley-driven hybrid nanophotonic-optoelectronic circuit that integrates chirality-selective meta-waveguide photodetectors with transition metal dichalcogenides. At room temperature, our purposely designed meta-waveguide device generates near-unity valley-dependent chiral photons in the second harmonic generation from an encapsulated tungsten disulfide monolayer and selectively couples them to unidirectional waveguide modes, achieving an exceptional polarisation selectivity of 0.97. These valley-dependent waveguide modes were subsequently detected by atomically thin few-layer tungsten diselenide photodetectors, exclusively responsive to the above-bandgap upconverted photons, thereby enabling all-on-chip processing of valley-multiplexed images. Our demonstration bridges a critical gap in lightwave valleytronics, paving the way for compact, scalable valley information processing and fostering the development of light-based valleytronic quantum technologies.
title Valley optoelectronics based on meta-waveguide photodetectors
topic Optics
url https://arxiv.org/abs/2503.19565