Spatial Control of Charge Doping in n-Type Topological Insulators
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| Main Authors: | , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866915216077357056 |
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| author | Sakamoto, Kazuyuki Ishikawa, Hirotaka Wake, Takashi Ishimoto, Chie Fujii, Jun Bentmann, Hendrik Ohtaka, Minoru Kuroda, Kenta Inoue, Natsu Hattori, Takuma Miyamachi, Toshio Komori, Fumio Yamamoto, Isamu Fan, Cheng Krüger, Peter Ota, Hiroshi Matsui, Fumihiko Reinert, Friedrich Avila, José Asensio, Maria C. |
| author_facet | Sakamoto, Kazuyuki Ishikawa, Hirotaka Wake, Takashi Ishimoto, Chie Fujii, Jun Bentmann, Hendrik Ohtaka, Minoru Kuroda, Kenta Inoue, Natsu Hattori, Takuma Miyamachi, Toshio Komori, Fumio Yamamoto, Isamu Fan, Cheng Krüger, Peter Ota, Hiroshi Matsui, Fumihiko Reinert, Friedrich Avila, José Asensio, Maria C. |
| contents | Spatially controlling the Fermi level of topological insulators and keeping its electronic states stable are indispensable processes to put this material into practical use for semiconductor spintronics devices. So far, however, such a method has not been established yet. Here we show a novel method for doping hole into n-type topological insulators Bi$_2$X$_3$ (X= Se, Te) that overcomes the shortcomings of the previous reported methods. The key of this doping is to adsorb H$_2$O on Bi$_2$X$_3$ decorated with a small amount of carbon, and its trigger is the irradiation of photon with sufficient energy to excite core-electrons of the outermost layer atoms. This method allows controlling the doping amount by the irradiation time, and acts as photolithography. Such a tunable doping makes it possible to design the electronic states at the nanometer scale, and thus paves a promising avenue toward the realization of novel spintronics devices based on topological insulators. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2503_20334 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Spatial Control of Charge Doping in n-Type Topological Insulators Sakamoto, Kazuyuki Ishikawa, Hirotaka Wake, Takashi Ishimoto, Chie Fujii, Jun Bentmann, Hendrik Ohtaka, Minoru Kuroda, Kenta Inoue, Natsu Hattori, Takuma Miyamachi, Toshio Komori, Fumio Yamamoto, Isamu Fan, Cheng Krüger, Peter Ota, Hiroshi Matsui, Fumihiko Reinert, Friedrich Avila, José Asensio, Maria C. Mesoscale and Nanoscale Physics Materials Science Spatially controlling the Fermi level of topological insulators and keeping its electronic states stable are indispensable processes to put this material into practical use for semiconductor spintronics devices. So far, however, such a method has not been established yet. Here we show a novel method for doping hole into n-type topological insulators Bi$_2$X$_3$ (X= Se, Te) that overcomes the shortcomings of the previous reported methods. The key of this doping is to adsorb H$_2$O on Bi$_2$X$_3$ decorated with a small amount of carbon, and its trigger is the irradiation of photon with sufficient energy to excite core-electrons of the outermost layer atoms. This method allows controlling the doping amount by the irradiation time, and acts as photolithography. Such a tunable doping makes it possible to design the electronic states at the nanometer scale, and thus paves a promising avenue toward the realization of novel spintronics devices based on topological insulators. |
| title | Spatial Control of Charge Doping in n-Type Topological Insulators |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2503.20334 |