Modeling Practical Capacitive Structures for Electronic and Dielectric Property Extraction and Analysis

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Main Authors: Champlain, James G., Gokhale, Vikrant J., Hardy, Matthew T., Jin, Eric N.
Format: Preprint
Published: 2025
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_version_ 1866916970559963136
author Champlain, James G.
Gokhale, Vikrant J.
Hardy, Matthew T.
Jin, Eric N.
author_facet Champlain, James G.
Gokhale, Vikrant J.
Hardy, Matthew T.
Jin, Eric N.
contents A method for modeling the full steady-state and small-signal behavior of practical capacitive structures, such as metal-insulator-metal capacitors, diodes, and transistors, is presented. Simple lumped element models fail to properly represent the behavior of most practical structures, resulting in incorrect electronic material property extraction and evaluation. The methodology and model presented in this paper properly characterizes practical structures and can be employed to more accurately understand and evaluate experimental results, extract various electronic and dielectric properties of the constituent materials, and predict possible behavior of new structures and materials. The impact of dielectric properties (e.g., real versus complex permittivity, conductance, Cole-Cole dielectric response) and geometry on observed behavior of practical structures, especially with regard to extracting correct property values, is discussed.
format Preprint
id arxiv_https___arxiv_org_abs_2503_20961
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Modeling Practical Capacitive Structures for Electronic and Dielectric Property Extraction and Analysis
Champlain, James G.
Gokhale, Vikrant J.
Hardy, Matthew T.
Jin, Eric N.
Materials Science
Mesoscale and Nanoscale Physics
A method for modeling the full steady-state and small-signal behavior of practical capacitive structures, such as metal-insulator-metal capacitors, diodes, and transistors, is presented. Simple lumped element models fail to properly represent the behavior of most practical structures, resulting in incorrect electronic material property extraction and evaluation. The methodology and model presented in this paper properly characterizes practical structures and can be employed to more accurately understand and evaluate experimental results, extract various electronic and dielectric properties of the constituent materials, and predict possible behavior of new structures and materials. The impact of dielectric properties (e.g., real versus complex permittivity, conductance, Cole-Cole dielectric response) and geometry on observed behavior of practical structures, especially with regard to extracting correct property values, is discussed.
title Modeling Practical Capacitive Structures for Electronic and Dielectric Property Extraction and Analysis
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2503.20961