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Main Authors: Malyshev, Roman, Brekke, Bjørnulf, Svenum, Ingeborg-Helene, Selbach, Sverre M., Brüne, Christoph, Brataas, Arne, Tybell, Thomas
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2503.21637
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author Malyshev, Roman
Brekke, Bjørnulf
Svenum, Ingeborg-Helene
Selbach, Sverre M.
Brüne, Christoph
Brataas, Arne
Tybell, Thomas
author_facet Malyshev, Roman
Brekke, Bjørnulf
Svenum, Ingeborg-Helene
Selbach, Sverre M.
Brüne, Christoph
Brataas, Arne
Tybell, Thomas
contents CuFeS$_2$ is an altermagnetic semiconductor that is lattice-matched with silicon and has a high Néel temperature. It is nonpolar and magnetically compensated in its structural ground state. However, the crystal belongs to a magnetic symmetry class allowing simultaneous piezoelectricity and -magnetism, indicating that distortion by shear strain may enable functional properties not observed in its tetragonal ground state. This first-principles study explores how biaxial and shear strain affect the crystal structure and functional properties. Biaxial strain lowers crystal symmetry when applied to two of the three crystallographic {001} planes considered, enhancing the altermagnetic lifting of the Kramers degeneracy. Shear strain has a compressive effect on the crystal, enhancing the effects on the electronic structure seen under biaxial compressive strain. Applying it to any one of the three {001} planes induces a polar phase with an out-of-plane electric polarization, perpendicular to the strained plane. Moreover, applying shear strain to two out of the three {001} planes induces a net magnetization simultaneously with electric polarization, producing a multiferroic response.
format Preprint
id arxiv_https___arxiv_org_abs_2503_21637
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Shear Strain-Induced Multiferroic Response in the Altermagnetic Semiconductor CuFeS$_2$
Malyshev, Roman
Brekke, Bjørnulf
Svenum, Ingeborg-Helene
Selbach, Sverre M.
Brüne, Christoph
Brataas, Arne
Tybell, Thomas
Materials Science
CuFeS$_2$ is an altermagnetic semiconductor that is lattice-matched with silicon and has a high Néel temperature. It is nonpolar and magnetically compensated in its structural ground state. However, the crystal belongs to a magnetic symmetry class allowing simultaneous piezoelectricity and -magnetism, indicating that distortion by shear strain may enable functional properties not observed in its tetragonal ground state. This first-principles study explores how biaxial and shear strain affect the crystal structure and functional properties. Biaxial strain lowers crystal symmetry when applied to two of the three crystallographic {001} planes considered, enhancing the altermagnetic lifting of the Kramers degeneracy. Shear strain has a compressive effect on the crystal, enhancing the effects on the electronic structure seen under biaxial compressive strain. Applying it to any one of the three {001} planes induces a polar phase with an out-of-plane electric polarization, perpendicular to the strained plane. Moreover, applying shear strain to two out of the three {001} planes induces a net magnetization simultaneously with electric polarization, producing a multiferroic response.
title Shear Strain-Induced Multiferroic Response in the Altermagnetic Semiconductor CuFeS$_2$
topic Materials Science
url https://arxiv.org/abs/2503.21637